Investigations of Structural, Electronic, and Half-metallic Ferromagnetic Properties in (Al, Ga, In)1−x M x N (M = Fe, Mn) Diluted Magnetic Semiconductors

2012 ◽  
Vol 26 (3) ◽  
pp. 515-525 ◽  
Author(s):  
B. Doumi ◽  
A. Tadjer ◽  
F. Dahmane ◽  
D. Mesri ◽  
H. Aourag
2001 ◽  
Vol 666 ◽  
Author(s):  
Kazunori Sato ◽  
Hiroshi Katayama-Yoshida

ABSTRACTWe propose a materials design to fabricate the transparent and half-metallic ferromagnets in V-, Cr-, Mn+hole, Fe-, Co-, and Ni-doped ZnO based upon ab initio electronic structure calculation. Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. The ferromagnetic state becomes more stable by electron doping in Fe-, Co- or Ni-doped ZnO. From the point of practical applications, it is feasible to realize the half-metallic ferromagnets with high Curie temperature, because n-type ZnO is easily available. We propose the design of new functional devices, such as spin-FET, photo-induced ferromagnets, and spin-injection devices using negative electron affinity in the wide band gap semiconductors.


2011 ◽  
Vol 184 (5) ◽  
pp. 1273-1278 ◽  
Author(s):  
Yang Liu ◽  
Yanting Yang ◽  
Jinghai Yang ◽  
Qingfeng Guan ◽  
Huilian Liu ◽  
...  

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