Estimation of track registration efficiency in solution medium and study of gamma irradiation effects on the bulk-etch rate and the activation energy for bulk etching of CR-39 (DOP) solid state nuclear track detector

2010 ◽  
Vol 287 (2) ◽  
pp. 581-584 ◽  
Author(s):  
P. C. Kalsi
Keyword(s):  
Activation Energy ◽  
Solid State ◽  
Gamma Irradiation ◽  
Etch Rate ◽  
Track Detector ◽  
Irradiation Effects ◽  
Nuclear Track Detector ◽  
Bulk Etch Rate ◽  
Registration Efficiency

Effects of UV irradiation on Fission-fragment track parameters in Makrofol-E detector

2019 ◽  
Vol 28 (12) ◽  
pp. 1950110 ◽  
Author(s):  
R. K. Jain ◽  
S. Kumar ◽  
A. Kumar ◽  
Aniket Kumar ◽  
M. K. Singh ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid State ◽  
Fission Fragment ◽  
Etch Rate ◽  
Activation Energies ◽  
Track Detector ◽  
Nuclear Track Detector ◽  
Bulk Etch Rate ◽  
Track Etch Rate ◽  
Track Etch

This study gives information about the effects of UV (here, the wavelength is 160 nm) exposure on the bulk etch rate ([Formula: see text], track etch rate ([Formula: see text], the detector sensitivity ([Formula: see text], critical angle ([Formula: see text] and etching efficiency ([Formula: see text] of Makrofol-E Solid State Nuclear Track Detector. The effect of UV on the activation energy of Makrofol-E was also studied. Nine pieces of Makrofol-E Solid State Nuclear Track Detector were separated into three equal sets as set A, set B and set C. Set A, named as reference set (Fission fragment FF), was irradiated to [Formula: see text]Cf source. Set B, called as post-exposed ([Formula: see text]), was first irradiated to [Formula: see text]Cf and then exposed to UV. The process was reversed for set C named as pre-exposed ([Formula: see text]) at the same conditions. From the results, it is concluded that radiation produces small but significant effect on activation energy [Formula: see text] of bulk etch rate for pre-exposed and post-exposed samples. Also, the activation energies [Formula: see text] of track etch rate for post-exposed and Fission fragment samples are within experimental uncertainty. The energy carried by UV radiation may be responsible for cross networking processes occurring during the exposure which results small change in activation energies for both [Formula: see text] and [Formula: see text]. The [Formula: see text] can be increased by hardening detector material of the pre-exposed detector.

Evaluation of Bulk Etch Rate of Solid State Nuclear Track Detector CR-39

2015 ◽  
Vol 1107 ◽  
pp. 712-715
Author(s):  
Anees A. Al-Hamzawi ◽  
M.S. Jaffar ◽  
Nada F. Tawfiq ◽  
Murtadha Sh. Aswood
Keyword(s):  
Solid State ◽  
Etch Rate ◽  
Solution Concentration ◽  
Track Detector ◽  
Etching Time ◽  
Nuclear Track Detector ◽  
Bulk Etch Rate ◽  
Different Temperatures ◽  
Naoh Solution

In the current study, the bulk etch rate VBof solid state nuclear track detectors SSNTDs CR-39 have been examined at different concentrations of NaOH solution ranged from 4N to 8N and different temperatures of NaOH solution (50, 60, 70, 80°C) for various time intervals of etching (1-10 h); this is done by determination of mass variation via etching time. The results indicate that the bulk etch rate VBincreases with the increase of etchant solution concentration and the temperature of solution. This can be attributed to the increase the thickness of the removed layers h of the detector.

scholarly journals Gamma Irradiation Effects on Track Properties of PADC-American Acrylics Track Detector

2012 ◽  
Vol 9 (4) ◽  
pp. 2226-2231
Author(s):  
Dipak Sinha
Keyword(s):  
Gamma Radiation ◽  
Gamma Irradiation ◽  
Rate Ratio ◽  
Etch Rate ◽  
Dose Range ◽  
Track Detector ◽  
Irradiation Effects ◽  
Etch Rates ◽  
Track Etch

Gamma irradiation effects on track properties of Polyallyl Diglycol Carbonate (PADC) track detector (PADC-American Acrylics) are studied in the dose range of 101-106Gy. It is observed that due to gamma exposure the bulk and track-etch rates of the detector increases. This increase in both etch-rates is more pronounced in post gamma exposed PADC detectors. The etch-rate ratio (S) for both pre and post-gamma exposed detectors decreases with increasing etching temperature at the dose of 106Gy. At a higher etching temperature of 70ºC, the etch rates ratio becomes almost equal for post gamma exposed detector. Etching efficiency of the detector is found to be much higher when exposed to gamma radiation. However it is observed that at the etching temperature of 70ºC, etching efficiency for both pre and post-gamma exposed samples tends to become almost equal to the pristine one.

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