Metastable-Stable Phase Transformation Behavior of Al2O3 Scale Formed on Fe–Ni–Al Alloys

2016 ◽  
Vol 86 (1-2) ◽  
pp. 151-164 ◽  
Author(s):  
Shigenari Hayashi ◽  
Yuto Takada ◽  
Suzue Yoneda ◽  
Shigeharu Ukai
Keyword(s):  
Phase Transformation ◽  
Al Alloys ◽  
Stable Phase ◽  
Al2o3 Scale ◽  
Transformation Behavior ◽  
Phase Transformation Behavior

Evolution of Phase Transformation Behavior in Li(Mn1.5Ni0.5)O4 Cathodes Studied By In Situ XRD

2011 ◽  
Vol 158 (8) ◽  
pp. A890 ◽  
Author(s):  
Kevin Rhodes ◽  
Roberta Meisner ◽  
Yoongu Kim ◽  
Nancy Dudney ◽  
Claus Daniel
Keyword(s):  
Phase Transformation ◽  
Transformation Behavior ◽  
Phase Transformation Behavior ◽  
In Situ Xrd

Cracking and Phase Transformation in Silicon During Nanoindentation

2003 ◽  
Vol 795 ◽  
Author(s):  
Jae-il Jang ◽  
Songqing Wen ◽  
M. J. Lance ◽  
I. M. Anderson ◽  
G. M. Pharr
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transformation ◽  
Single Crystals ◽  
Transformation Behavior ◽  
Amorphous Phases ◽  
Phase Transformation Behavior ◽  
Wide Range ◽  
Load Displacement ◽  
Indenter Geometry

ABSTRACTNanoindentation experiments were performed on single crystals of (100) Si using a series of triangular pyramidal indenters with centerline-to-face angles in the range 35.3° to 85.0°. The influences of the indenter geometry on cracking and phase transformation during indentation were systematically studied. Although reducing the indenter angle reduces the threshold load for cracking and increases the crack lengths, c, at a given indention load, P, the frequently observed relation between P and c3/2 is maintained for all of the indenters over a wide range of load. Features in the nanoindentation load-displacement curves in conjunction with Raman spectroscopy of the crystalline and amorphous phases in and around the contact impression show that the indenter geometry also plays a role in the phase transformation behavior. Results are discussed in relation to prevailing ideas about indentation cracking and phase transformation in silicon.

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