A study of the operating parameters and barrier thickness of Al0.08In0.08Ga0.84N/Al x In y Ga1−x−y N double quantum well laser diodes

2010 ◽  
Vol 54 (1) ◽  
pp. 47-51 ◽  
Author(s):  
A. J. Ghazai ◽  
S. M. Thahab ◽  
H. Abu Hassan ◽  
Z. Hassan
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Double Quantum ◽  
Operating Parameters ◽  
Barrier Thickness ◽  
Quantum Well Laser ◽  
Double Quantum Well

Simulation and optimization of deep violet InGaN double quantum well laser

2012 ◽  
Vol 285 (5) ◽  
pp. 746-750 ◽  
Author(s):  
Gh. Alahyarizadeh ◽  
A.J. Ghazai ◽  
R. Rahmani ◽  
H. Mahmodi ◽  
Z. Hassan
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Simulation And Optimization ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Deep Violet

Simulation of double quantum well GaInNAs laser diodes

2007 ◽  
Vol 1 (6) ◽  
pp. 259-265 ◽  
Author(s):  
J.J. Lim ◽  
P.M. Smowton ◽  
E.C. Larkins ◽  
A. Larsson ◽  
P. Melanen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Double Quantum ◽  
Double Quantum Well

Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodes

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1013-1016 ◽  
Author(s):  
Rui Q. Yang ◽  
Jian Lu ◽  
J. M. Xu ◽  
D. J. Day
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Double Quantum ◽  
Tunnel Diodes ◽  
Barrier Thickness ◽  
Double Quantum Well ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resonant Interband Tunnel Diodes ◽  
Peak To Valley Ratio

The influence of the central barrier thickness to current–voltage characteristics of double-quantum-well (DQW) resonant interband tunnel diodes are experimentally investigated at room temperature. A peak to valley ratio greater than 100:1 at room temperature is obtained in the device with a central barrier thickness of 20 Å and a well width of 40 Å. (1 Å = 10−10 m).

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