Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition

1998 ◽  
Vol 34 (15) ◽  
pp. 1495 ◽  
Author(s):  
S. Sato ◽  
S. Satoh
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Double Quantum ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Metal Organic

1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
Ray Murray ◽  
Caroline Bryan ◽  
Chris Button ◽  
D. Spikes ◽  
G. Hill
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Self Assembled ◽  
Multi Quantum Well

ABSTRACTSelf-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

GaAs double quantum well laser diode with short‐period (AlGaAs)m(GaAs)nsuperlattice barriers

1989 ◽  
Vol 54 (15) ◽  
pp. 1388-1390 ◽  
Author(s):  
H. Imamoto ◽  
F. Sato ◽  
K. Imanaka ◽  
M. Shimura
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Double Quantum ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Short Period

980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition

1998 ◽  
Vol 34 (13) ◽  
pp. 1312 ◽  
Author(s):  
G.W. Yang ◽  
Z.T. Xu ◽  
X.Y. Ma ◽  
J.Y. Xu ◽  
J.M. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Quantum Well Lasers ◽  
Organic Chemical ◽  
Metal Organic
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