Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator
2011 ◽
Vol 40
(8)
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pp. 1769-1774
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2008 ◽
Vol 254
(11)
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pp. 3376-3379
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2004 ◽
Vol 21
(2-4)
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pp. 312-316
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Keyword(s):
2009 ◽
Vol 246
(4)
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pp. 721-724
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2008 ◽
Vol 52
(6)
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pp. 871-876
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2002 ◽
Vol 237-239
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pp. 1892-1897
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2017 ◽
Vol 70
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pp. 167-172
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Keyword(s):