Comparison of Microwave Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films Grown on (100) LaAlO3 and (100) MgO Single-Crystal Substrates

2013 ◽  
Vol 42 (6) ◽  
pp. 988-992 ◽  
Author(s):  
Hui Wang ◽  
Yanlong Bian ◽  
Bo Shen ◽  
Jiwei Zhai
2009 ◽  
Vol 95 (22) ◽  
pp. 222902 ◽  
Author(s):  
L. M. B. Alldredge ◽  
Wontae Chang ◽  
Steven W. Kirchoefer ◽  
Jeffrey M. Pond

2006 ◽  
Vol 45 ◽  
pp. 2332-2336
Author(s):  
Ki Hyun Yoon ◽  
Ji Won Choi

The microwave dielectric properties of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films have been investigated with correlation between the interface and stress induced by dielectric layers with heattreatment. As the thickness (X) of CaTiO3 film increased, the dielectric constant increased and the temperature coefficient of the dielectric constant changed from the positive to the negative values by the dielectric mixing rule. The dielectric loss of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films increased with an increase of the thickness (X) of CaTiO3 film because of higher thermal stress induced by the higher thermal expansion coefficient of CaTiO3 than that of MgTiO3.


2007 ◽  
Vol 356 (1) ◽  
pp. 158-165 ◽  
Author(s):  
K. Venkata Saravanan ◽  
K. Sudheendran ◽  
M. Ghanashyam Krishna ◽  
K. C. James Raju

2004 ◽  
Vol 13 (1-3) ◽  
pp. 257-260 ◽  
Author(s):  
Seung Eon Moon ◽  
Eun-Kyoung Kim ◽  
Su-Jae Lee ◽  
Min-Hwan Kwak ◽  
Young-Tae Kim ◽  
...  

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