Measurements of Microwave Dielectric Properties of (1-x)TiO2-xCaTiO3 and (1-x)TiO2-xSrTiO3 thin Films By The Cavity Perturbation Method

2011 ◽  
Vol 25 (13) ◽  
pp. 1886-1894 ◽  
Author(s):  
J. Sheen ◽  
C.-Y. Li ◽  
S.-W. Lin
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perturbation Method ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric ◽  
Cavity Perturbation

Effect of heterogeneous interface on the microwave dielectric properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 thin films

2012 ◽  
Vol 259 ◽  
pp. 29-33 ◽  
Author(s):  
Jing Zhou ◽  
Runrun Li ◽  
Ru Li ◽  
Wen Chen
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric

Microwave dielectric properties of BaTiO3 and Ba0.5Sr0.5TiO3 thin films on (001) MgO

2009 ◽  
Vol 95 (22) ◽  
pp. 222902 ◽  
Author(s):  
L. M. B. Alldredge ◽  
Wontae Chang ◽  
Steven W. Kirchoefer ◽  
Jeffrey M. Pond
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric

Effect of Thermal Stress on the Microwave Dielectric Properties of (300-X) nm MgTiO3 /(X) nm CaTiO3 Thin Films

2006 ◽  
Vol 45 ◽  
pp. 2332-2336
Author(s):  
Ki Hyun Yoon ◽  
Ji Won Choi
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Microwave Dielectric Properties ◽  
Mixing Rule ◽  
Microwave Dielectric ◽  
Dielectric Layers

The microwave dielectric properties of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films have been investigated with correlation between the interface and stress induced by dielectric layers with heattreatment. As the thickness (X) of CaTiO3 film increased, the dielectric constant increased and the temperature coefficient of the dielectric constant changed from the positive to the negative values by the dielectric mixing rule. The dielectric loss of (300-X) nm MgTiO3/(X) nm CaTiO3 thin films increased with an increase of the thickness (X) of CaTiO3 film because of higher thermal stress induced by the higher thermal expansion coefficient of CaTiO3 than that of MgTiO3.

Broadband Microwave Dielectric Properties of BST Thin Films on Quartz Substrates

2007 ◽  
Vol 356 (1) ◽  
pp. 158-165 ◽  
Author(s):  
K. Venkata Saravanan ◽  
K. Sudheendran ◽  
M. Ghanashyam Krishna ◽  
K. C. James Raju
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Bst Thin Films ◽  
Microwave Dielectric ◽  
Quartz Substrates

Measurement of Microwave Dielectric Properties of Pb(Zr1?xTrx)O3 Thin Films

2004 ◽  
Vol 13 (1-3) ◽  
pp. 257-260 ◽  
Author(s):  
Seung Eon Moon ◽  
Eun-Kyoung Kim ◽  
Su-Jae Lee ◽  
Min-Hwan Kwak ◽  
Young-Tae Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Microwave Dielectric

Strain-induced anisotropy in microwave dielectric properties of (Ba,Sr)TiO3 thin films with directly applied uniaxial ⟨100⟩ stress

2005 ◽  
Vol 87 (24) ◽  
pp. 242904 ◽  
Author(s):  
Wontae Chang ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
Jeffrey A. Bellotti
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Microwave Dielectric Properties ◽  
Induced Anisotropy ◽  
Microwave Dielectric
Sign in / Sign up

Export Citation Format

Share Document