Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

2016 ◽  
Vol 46 (3) ◽  
pp. 1612-1619 ◽  
Author(s):  
M. Barchuk ◽  
G. Lukin ◽  
F. Zimmermann ◽  
C. Röder ◽  
M. Motylenko ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Vapor

Modified high temperature vapor phase epitaxy for growth of GaN films

2017 ◽  
Vol 214 (9) ◽  
pp. 1600753 ◽  
Author(s):  
G. Lukin ◽  
T. Schneider ◽  
M. Barchuk ◽  
F. Zimmermann ◽  
E. Niederschlag ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Vapor

Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy

2019 ◽  
Vol 524 ◽  
pp. 125185 ◽  
Author(s):  
G. Lukin ◽  
T. Schneider ◽  
M. Förste ◽  
M. Barchuk ◽  
C. Schimpf ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates ◽  
High Temperature Vapor

Studies on high temperature vapor phase epitaxy of GaN

2017 ◽  
Vol 468 ◽  
pp. 212-215 ◽  
Author(s):  
T. Schneider ◽  
G. Lukin ◽  
F. Zimmermann ◽  
M. Barchuk ◽  
E. Niederschlag ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Vapor

Investigation of GaN layers grown by high temperature vapor phase epitaxy

2014 ◽  
Vol 11 (3-4) ◽  
pp. 491-494 ◽  
Author(s):  
G. Lukin ◽  
C. Röder ◽  
M. Barchuk ◽  
G. Schreiber ◽  
O. Pätzold ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Vapor

High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

2008 ◽  
Vol 310 (17) ◽  
pp. 4016-4019 ◽  
Author(s):  
Ken-ichi Eriguchi ◽  
Takako Hiratsuka ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth

scholarly journals Tuning Pt-CeO2 interactions by high-temperature vapor-phase synthesis for improved reducibility of lattice oxygen

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Xavier Isidro Pereira-Hernández ◽  
Andrew DeLaRiva ◽  
Valery Muravev ◽  
Deepak Kunwar ◽  
Haifeng Xiong ◽  
...  
Keyword(s):  
High Temperature ◽  
Co Oxidation ◽  
Vapor Phase ◽  
Ambient Pressure ◽  
Lattice Oxygen ◽  
Single Atom ◽  
Stable Form ◽  
Phase Synthesis ◽  
Vapor Phase Synthesis ◽  
High Temperature Vapor

Abstract In this work, we compare the CO oxidation performance of Pt single atom catalysts (SACs) prepared via two methods: (1) conventional wet chemical synthesis (strong electrostatic adsorption–SEA) with calcination at 350 °C in air; and (2) high temperature vapor phase synthesis (atom trapping–AT) with calcination in air at 800 °C leading to ionic Pt being trapped on the CeO2 in a thermally stable form. As-synthesized, both SACs are inactive for low temperature (<150 °C) CO oxidation. After treatment in CO at 275 °C, both catalysts show enhanced reactivity. Despite similar Pt metal particle size, the AT catalyst is significantly more active, with onset of CO oxidation near room temperature. A combination of near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and CO temperature-programmed reduction (CO-TPR) shows that the high reactivity at low temperatures can be related to the improved reducibility of lattice oxygen on the CeO2 support.

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