High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

2008 ◽  
Vol 310 (17) ◽  
pp. 4016-4019 ◽  
Author(s):  
Ken-ichi Eriguchi ◽  
Takako Hiratsuka ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates

2008 ◽  
Vol 310 (7-9) ◽  
pp. 2308-2313 ◽  
Author(s):  
Masataka Imura ◽  
Hiroki Sugimura ◽  
Narihito Okada ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

2009 ◽  
Vol 48 (1) ◽  
pp. 011102 ◽  
Author(s):  
Yasushi Takano ◽  
Kenta Morizumi ◽  
Satoshi Watanabe ◽  
Hiroyuki Masuda ◽  
Takuya Okamoto ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Si Substrates

Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1093-1097 ◽  
Author(s):  
K. Yasuda ◽  
H. Hatano ◽  
T. Ferid ◽  
K. Kawamoto ◽  
T. Maejima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (No. 14) ◽  
pp. L307-L310 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Akria Bandoh ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Dislocation Content

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

2016 ◽  
Vol 46 (3) ◽  
pp. 1612-1619 ◽  
Author(s):  
M. Barchuk ◽  
G. Lukin ◽  
F. Zimmermann ◽  
C. Röder ◽  
M. Motylenko ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Vapor
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