Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate

2019 ◽  
Vol 48 (4) ◽  
pp. 2174-2182
Author(s):  
Suresh K. Jangir ◽  
Hitendra K. Malik ◽  
Anand Kumar ◽  
D. V. Sridhar Rao ◽  
R. Muralidharan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Inas Nanowires ◽  
Free Growth

scholarly journals Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy

2014 ◽  
Vol 105 (15) ◽  
pp. 153114 ◽  
Author(s):  
S. E. Harrison ◽  
P. Schönherr ◽  
Y. Huo ◽  
J. S. Harris ◽  
T. Hesjedal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Free Growth

Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

RSC Advances ◽  
2016 ◽  
Vol 6 (10) ◽  
pp. 7791-7797 ◽  
Author(s):  
Seong Gi Jeon ◽  
Dong Woo Park ◽  
Ho Sun Shin ◽  
Hyun Min Park ◽  
Si Young Choi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermoelectric Properties ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Planar Defects ◽  
Catalyst Free ◽  
Inas Nanowires ◽  
Si Doped

Undoped InAs and Si-doped InAs nanowires with stacking faults and twins were synthesized by catalyst-free molecular beam epitaxy and their thermoelectric enhancements due to planar defects were experimentally and theoretically demonstrated.

scholarly journals Catalyst-free growth of InAs/InxGa1−xAs coaxial nanorod heterostructures on graphene layers using molecular beam epitaxy

2015 ◽  
Vol 7 (8) ◽  
pp. e206-e206 ◽  
Author(s):  
Youngbin Tchoe ◽  
Janghyun Jo ◽  
Miyoung Kim ◽  
Gyu-Chul Yi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Graphene Layers ◽  
Catalyst Free ◽  
Free Growth

Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy

2017 ◽  
Vol 28 (13) ◽  
pp. 135704 ◽  
Author(s):  
Hyok So ◽  
Dong Pan ◽  
Lixia Li ◽  
Jianhua Zhao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Free Growth

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

2008 ◽  
Vol 77 (15) ◽  
Author(s):  
C. Colombo ◽  
D. Spirkoska ◽  
M. Frimmer ◽  
G. Abstreiter ◽  
A. Fontcuberta i Morral
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Gaas Nanowires ◽  
Free Growth

InAs1−xPxnanowires grown by catalyst-free molecular-beam epitaxy

2013 ◽  
Vol 24 (8) ◽  
pp. 085707 ◽  
Author(s):  
I Isakov ◽  
M Panfilova ◽  
M J L Sourribes ◽  
V Tileli ◽  
A E Porter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free

Vapor-Solid Selective Area Molecular Beam Epitaxy and N-Type Doping of Catalyst-Free GaAs:Si Nanowires on Silicon

2019 ◽  
Author(s):  
Daniel Ruhstorfer ◽  
Simon Mejia ◽  
Hubert Riedl ◽  
Jonathan James Finley ◽  
Gregor Koblmuller
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Selective Area

Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular-beam epitaxy

2020 ◽  
Vol 31 (15) ◽  
pp. 155601
Author(s):  
Lianjun Wen ◽  
Dong Pan ◽  
Dunyuan Liao ◽  
Jianhua Zhao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Catalyst Free

scholarly journals Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

2013 ◽  
Vol 102 (22) ◽  
pp. 223105 ◽  
Author(s):  
Chloé Rolland ◽  
Philippe Caroff ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
Renaud Leturcq
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
Inas Nanowires
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