Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

2020 ◽  
Vol 49 (11) ◽  
pp. 6977-6982
Author(s):  
T. Kujofsa ◽  
J. E. Ayers
Keyword(s):  
Dislocation Pinning

scholarly journals 1016 Atomic Scale Analyses of the Grain Boundary Structural Influence on Dislocation Pinning Effects

2012 ◽  
Vol 2012.25 (0) ◽  
pp. 416-418
Author(s):  
Keisuke KINOSHITA ◽  
Tomotsugu SHIMOKAWA ◽  
Lina WAKAKO ◽  
Toshiyasu KINARI
Keyword(s):  
Grain Boundary ◽  
Atomic Scale ◽  
Dislocation Pinning ◽  
Structural Influence

Long-range migration of self-interstitials and dislocation pinning in niobium

1986 ◽  
Vol 20 (3) ◽  
pp. 427-432 ◽  
Author(s):  
J. Lauzier ◽  
J. Hillairet ◽  
G. Funk ◽  
H. Schultz
Keyword(s):  
Long Range ◽  
Dislocation Pinning ◽  
Range Migration

Effect of Purity on Dislocation-Induced Relaxations in Molybdenum Single Crystals

2015 ◽  
Vol 363 ◽  
pp. 106-111
Author(s):  
Shigeru Suzuki ◽  
Alfred Seeger
Keyword(s):  
Internal Friction ◽  
Single Crystals ◽  
High Purity ◽  
Low Frequency ◽  
Activation Process ◽  
Dislocation Interaction ◽  
Dissolved Carbon ◽  
Dislocation Pinning ◽  
Friction Measurements ◽  
Substitutional Impurities

Dislocation-induced relaxations in different molybdenum single crystals were investigated by means of low-frequency internal friction measurements in the temperature range of 20–600 K. The results indicated that the appearance of the dislocation-induced relaxations strongly depends on the purity of the molybdenum, although the intrinsic dislocation relaxations appeared at about 100 K and 450 K in the high-purity molybdenum. The molybdenum containing a small amount of carbon did not exhibit the intrinsic dislocation relaxations but rather revealed a modulus increase due to the dislocation pinning caused by the dissolved carbon. When the molybdenum containing a small amount of carbon was annealed up to 700 K, a new relaxation peak appeared at about 450 K. The activation process for this relaxation indicated that it could be attributed to the relaxation due to a carbon-dislocation interaction. In addition, it was shown that the dislocation-induced relaxations in medium-purity molybdenum were small, which was attributed to the residual substitutional impurities in the molybdenum.

Dislocation pinning effects induced by nano-precipitates during warm laser shock peening: Dislocation dynamic simulation and experiments

2011 ◽  
Vol 110 (2) ◽  
pp. 023518 ◽  
Author(s):  
Yiliang Liao ◽  
Chang Ye ◽  
Huang Gao ◽  
Bong-Joong Kim ◽  
Sergey Suslov ◽  
...  
Keyword(s):  
Dynamic Simulation ◽  
Laser Shock Peening ◽  
Laser Shock ◽  
Dislocation Dynamic ◽  
Dislocation Pinning ◽  
Shock Peening
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