Implementation of BIM + WebGIS Based on Extended IFC and Batched 3D Tiles Data: An Application in RCC Gravity Dam for Republication of Design Change Model

Das „Implementation Change Model“ von Grol und Wensing ist ein Problemanalyse-Tool, mit dem Veränderungsprozesse in der Pflegepraxis analysiert werden können. Am Universitätsklinikum Bonn wurde damit untersucht, wie die interdisziplinäre Pflegeberatung durch Pflegeexperten angenommen wird. Anhand der Ergebnisse ließen sich Empfehlungen für die Verbesserung des Einsatzes der Pflegeexperten ableiten.

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Assessment of the Applicability of Pushover Analysis for a Concrete Gravity Dam

International Review of Civil Engineering (IRECE) ◽

10.15866/irece.v9i5.15806 ◽

2018 ◽

Vol 9 (5) ◽

pp. 181

Author(s):

Machach Laila ◽

Mouzzoun Mouloud ◽

Moustachi Oum El Khaiat ◽

Taleb Ali

Keyword(s):

Pushover Analysis ◽

Gravity Dam ◽

Concrete Gravity Dam

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PHASE CHANGE MODEL FOR TWO-PHASE FLUID FLOW BASED ON THE VOLUME OF FLUID METHOD

International Symposium on Advances in Computational Heat Transfer ◽

10.1615/ichmt.2008.cht.720 ◽

2008 ◽

Cited By ~ 5

Author(s):

Bitan Shu ◽

Frank Dammel ◽

Peter Stephan

Keyword(s):

Fluid Flow ◽

Phase Change ◽

Volume Of Fluid ◽

Change Model ◽

Volume Of Fluid Method ◽

Two Phase ◽

Phase Fluid

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Conversion of a D-Mode FET to an E-Mode FET via Electrostatic Discharge in a GaAs Power Amplifier Duplexer Module

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0091 ◽

2013 ◽

Author(s):

Rose Emergo ◽

Steve Brockett

Keyword(s):

Cross Section ◽

Power Amplifier ◽

Electrostatic Discharge ◽

Fault Isolation ◽

Design Change ◽

Eds Analysis ◽

Defect Simulation

Abstract This paper outlines the systematic isolation of an electrostatic discharge defect on a depletion-mode FET. Topics covered are fault isolation, FIB-STEM cross-section and EDS analysis, and defect simulation. Multiple GaAs PA devices were submitted for analysis after failing different reliability stresses. Fault isolation revealed ESD damage on a DFET connected to the VMODE0 pin. Simulation of the failure showed that, most likely, the defect was caused by CDM stress. A design change of inserting a resistor between the VMODE0 pin and the DFET made the device more robust against CDM stress.

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