Investigation of Quantum Confinement Effects on Molybdenum Disulfide (MoS2) Based Transistor Using Ritz Galerkin Finite Element Technique

Silicon ◽  
2021 ◽  
Author(s):  
R. Sridevi ◽  
J. Charles Pravin ◽  
A. Ramesh Babu ◽  
D. Nirmal
Keyword(s):  
Finite Element ◽  
Molybdenum Disulfide ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
Finite Element Technique ◽  
Galerkin Finite Element ◽  
Quantum Confinement Effects ◽  
Element Technique

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2nanowires

2011 ◽  
Vol 83 (24) ◽  
Author(s):  
O. Demichel ◽  
V. Calvo ◽  
P. Noé ◽  
B. Salem ◽  
P.-F. Fazzini ◽  
...  
Keyword(s):  
Band Gap ◽  
Quantum Confinement ◽  
Band Gap Energy ◽  
Core Shell ◽  
Confinement Effects ◽  
Gap Energy ◽  
Quantum Confinement Effects
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