A Study on the Electrochemical Synthesis and Characterization of CuInSe2 Thin Films on Mo and Si Substrates

2020 ◽  
Vol 46 (1) ◽  
pp. 301-308
Author(s):  
Yassine Haddad ◽  
Fatima Zohra Satour ◽  
Haithem Bouima ◽  
Abdelouahab Hassam ◽  
Ahmed Zouaoui ◽  
...  
2006 ◽  
Vol 41 (11) ◽  
pp. 3553-3559 ◽  
Author(s):  
T. Mahalingam ◽  
A. Kathalingam ◽  
S. Velumani ◽  
Soonil Lee ◽  
M. H. Sun ◽  
...  

2010 ◽  
Vol 157 (12) ◽  
pp. K279 ◽  
Author(s):  
F. Vacandio ◽  
M. Eyraud ◽  
C. Chassigneux ◽  
P. Knauth ◽  
T. Djenizian

2010 ◽  
Vol 494 (4-6) ◽  
pp. 237-242 ◽  
Author(s):  
L. Čerović ◽  
V. Lair ◽  
O. Lupan ◽  
M. Cassir ◽  
A. Ringuedé

1995 ◽  
Vol 10 (11) ◽  
pp. 2797-2800 ◽  
Author(s):  
P.J. Retuert ◽  
P.G. Kneuer ◽  
O. Wittke ◽  
R.E. Avila ◽  
G.J. Piderit

Polycrystalline LiTaO3 (LT) thin films have been prepared on (001)Si substrates by the sol-gel method. A Li-Ta double alkoxide prepared from lithium methoxide and tantalum ethoxide precursors was spin coated on Si and heated up to 950 °C. The dependence of the film quality upon the process variables, alkoxide concentration before hydrolysis, the water to double alkoxide ratio, and the final double alkoxide concentration, has been established. Preferential alignment of the (104) LT planes was observed parallel to the (100)Si surface. Most films present resistivities of the order of 30 kΩ · cm and breakdown field in excess of 200 kV/cm.


2011 ◽  
Vol 23 (2) ◽  
pp. 645-651 ◽  
Author(s):  
V. Dhanasekaran ◽  
T. Mahalingam ◽  
R. Chandramohan ◽  
J. P. Chu ◽  
Jin-Koo Rhee

2014 ◽  
Vol 116 ◽  
pp. 183-187 ◽  
Author(s):  
O.S. Khalipova ◽  
V. Lair ◽  
A. Ringuedé

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