Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes

2015 ◽  
Vol 11 (6) ◽  
pp. 1066-1071 ◽  
Author(s):  
Ilwan Jang ◽  
Jiwan Kim ◽  
Chang Jun Park ◽  
Christian Ippen ◽  
Tonino Greco ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Co Doped

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m−2

Small ◽  
2017 ◽  
Vol 13 (13) ◽  
pp. 1603962 ◽  
Author(s):  
Hung Chia Wang ◽  
Heng Zhang ◽  
Hao Yue Chen ◽  
Han Cheng Yeh ◽  
Mei Rurng Tseng ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

P-117: Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer

2017 ◽  
Vol 48 (1) ◽  
pp. 1699-1701
Author(s):  
Yizhe Sun ◽  
Huiren Peng ◽  
Shuming Chen ◽  
Shengdong Zhang
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting
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