Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal–oxide as an electron transport layer

2014 ◽  
Vol 54 (2S) ◽  
pp. 02BC01 ◽  
Author(s):  
Ilwan Jang ◽  
Jiwan Kim ◽  
Christian Ippen ◽  
Tonino Greco ◽  
Min Suk Oh ◽  
...  
Keyword(s):  
Electron Transport ◽  
Low Temperature ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Solution Processed ◽  
Light Emitting ◽  
Temperature Solution

Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes

2015 ◽  
Vol 11 (6) ◽  
pp. 1066-1071 ◽  
Author(s):  
Ilwan Jang ◽  
Jiwan Kim ◽  
Chang Jun Park ◽  
Christian Ippen ◽  
Tonino Greco ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

scholarly journals Efficient perovskite light-emitting diodes based on a solution-processed tin dioxide electron transport layer

2018 ◽  
Vol 6 (26) ◽  
pp. 6996-7002 ◽  
Author(s):  
Heyong Wang ◽  
Hongling Yu ◽  
Weidong Xu ◽  
Zhongcheng Yuan ◽  
Zhibo Yan ◽  
...  
Keyword(s):  
Electron Transport ◽  
Tin Dioxide ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Solution Processed ◽  
Light Emitting

Solution-processed tin dioxide is employed as an electron transport layer in n–i–p-structured perovskite light-emitting diodes realizing an EQE of 7.9%.

Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Co Doped
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