Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3
Keyword(s):
1998 ◽
Vol 37
(Part 1, No. 12B)
◽
pp. 7138-7142
Keyword(s):
Keyword(s):
1994 ◽
Vol 211
(2)
◽
pp. 127-134
◽
2006 ◽
Vol 6
(3)
◽
pp. 495-498
◽
Keyword(s):
2008 ◽
Vol 15
(4)
◽
pp. 77-81
◽
1978 ◽
Vol 149
(1-3)
◽
pp. 529-533
◽