The moving block bootstrap to assess the accuracy of statistical estimates in Ising model simulations

1995 ◽  
Vol 92 (2-3) ◽  
pp. 203-213 ◽  
Author(s):  
S. Mignani ◽  
R. Rosa
Keyword(s):  
Ising Model ◽  
Block Bootstrap ◽  
Model Simulations ◽  
Statistical Estimates ◽  
Moving Block Bootstrap

On the bootstrap and the moving block bootstrap for the maximum of a stationary process

1999 ◽  
Vol 76 (1-2) ◽  
pp. 1-17 ◽  
Author(s):  
Krishna B. Athreya ◽  
Jun-ichiro Fukuchi ◽  
Soumendra N. Lahiri
Keyword(s):  
Stationary Process ◽  
Block Bootstrap ◽  
Moving Block Bootstrap

Long range antiferromagnetic order in Ising model simulations in a two-dimensional Penrose lattice

2004 ◽  
Vol 334-335 ◽  
pp. 421-426 ◽  
Author(s):  
Susumu Matsuo ◽  
Shoji Fujiwara ◽  
Hiroshi Nakano ◽  
Tsutmu Ishimasa
Keyword(s):  
Ising Model ◽  
Long Range ◽  
Antiferromagnetic Order ◽  
Two Dimensional ◽  
Model Simulations

Ising Model Simulations Of Impurity Trapping in Silicon

1982 ◽  
Vol 13 ◽  
Author(s):  
George H. Gilmer
Keyword(s):  
Ising Model ◽  
Laser Annealing ◽  
Solidification Rate ◽  
Equilibrium Solubility ◽  
Kinetic Ising Model ◽  
Simulation Data ◽  
Model Simulations ◽  
The Difference ◽  
Annealing Experiments ◽  
Trapping Process

ABSTRACTLaser annealing experiments on silicon have shown that rapid solidification can trap large amounts of certain impurities in the crystal lattice. Concentrations that exceed the equilibrium solubility limits by several orders of magnitude have been obtained. In this paper we discuss the impurity trapping process using Monte Carlo simulation data from the kinetic Ising model. The dependence of the impurity concentration in the crystalon the solidification rate is calculated. The simulation data are compared with recent laser annealing results for bismuth and indium. Excellent agreement between the model and the bismuth experiments is obtained. The larger trapping rate on the (111) relative to the (100) orientation is found to be caused by the slower crystallization kinetics on the (111) face. Similar results are obtained for indium, although the difference in trapping on the (111) and (100) faces is somewhat smaller in the model than in the experiment.

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