A stochastic operator for interface dynamics and the canonical relation between compliance update and modal frequency variation—II. Non-deterministic evolution of modal frequency changes engendered by compliance influenced state-space variations

In this research, we construct a class of quadratic stochastic operator called Geometric quadratic stochastic operator generated by arbitrary 2-partition of infinite points on a countable state space , where . We also study the limiting behavior of such operator by proving the existence of the limit of the sequence through the convergence of the trajectory to a unique fixed point. It is established that such operator is a regular transformation.

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Analysis on Modal Frequency Variation of a Cable-Stayed Bridge Based on Monitoring Data

IABSE Symposium Report ◽

10.2749/222137813806474688 ◽

2013 ◽

Vol 99 (26) ◽

pp. 417-424

Author(s):

Limin Sun ◽

Yi Zhou

Keyword(s):

Monitoring Data ◽

Frequency Variation ◽

Modal Frequency ◽

Cable Stayed Bridge

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Assessment and evaluation of damage detection method based on modal frequency changes

10.1117/12.2009087 ◽

2013 ◽

Author(s):

Hien HoThu ◽

Akira Mita

Keyword(s):

Damage Detection ◽

Detection Method ◽

Modal Frequency ◽

Assessment And Evaluation ◽

Frequency Changes

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Using the exact element method and modal frequency changes to identify distributed damage in beams

Engineering Structures ◽

10.1016/j.engstruct.2013.01.019 ◽

2013 ◽

Vol 51 ◽

pp. 60-72 ◽

Cited By ~ 9

Author(s):

Yiska Goldfeld ◽

Dikla Elias

Keyword(s):

Modal Frequency ◽

Exact Element Method ◽

Frequency Changes ◽

Element Method

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SEM image sharpness analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100163174 ◽

1996 ◽

Vol 54 ◽

pp. 142-143

Author(s):

M. T. Postek ◽

A. E. Vladar

Keyword(s):

High Frequency ◽

Low Frequency ◽

Quantitative Information ◽

Primary Electron ◽

Image Sharpness ◽

Critical Dimensions ◽

Sem Image ◽

Frequency Changes ◽

Electron Microscopes ◽

Scanning Electron

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or better) at 1.0 kV accelerating voltage for the measurement of nominal 0.25-0.35 micrometer semiconductor critical dimensions. Testing and proving that the instrument is performing at this level on a day-by-day basis is an industry need and concern which has been the object of a study at NIST and the fundamentals and results are discussed in this paper.In scanning electron microscopy, two of the most important instrument parameters are the size and shape of the primary electron beam and any image taken in a scanning electron microscope is the result of the sample and electron probe interaction. The low frequency changes in the video signal, collected from the sample, contains information about the larger features and the high frequency changes carry information of finer details. The sharper the image, the larger the number of high frequency components making up that image. Fast Fourier Transform (FFT) analysis of an SEM image can be employed to provide qualitiative and ultimately quantitative information regarding the SEM image quality.

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