Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

1993 ◽  
Vol 127 (1-4) ◽  
pp. 966-971 ◽  
Author(s):  
G.W. Smith ◽  
A.J. Pidduck ◽  
C.R. Whitehouse ◽  
J.L. Glasper ◽  
J. Spowart
Keyword(s):  
Light Scattering ◽  
Surface Topography ◽  
Real Time ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Mbe Growth

In Situ Laser Light Scattering: II . Relationship to Silicon Surface Topography

1989 ◽  
Vol 136 (10) ◽  
pp. 3088-3094 ◽  
Author(s):  
A. J. Pidduck ◽  
D. J. Robbins ◽  
D. B. Gasson ◽  
C. Pickering ◽  
J. L. Glasper
Keyword(s):  
Light Scattering ◽  
Surface Topography ◽  
Silicon Surface ◽  
Laser Light ◽  
Laser Light Scattering

Real-time turning surface inspection using laser light scattering

2009 ◽  
Author(s):  
Arturo Moreno-Báez ◽  
Gerardo Miramontes de León ◽  
Francisco Tenorio-Pérez ◽  
Maximiano Ruiz-Torres ◽  
Jorge A. Huerta-Ruelas
Keyword(s):  
Light Scattering ◽  
Real Time ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Surface Inspection

Observation of thermal desorption and MBE growth rate using laser light scattering

2000 ◽  
Vol 373 (1-2) ◽  
pp. 239-242
Author(s):  
J Huerta-Ruelas ◽  
M López-López ◽  
O Zelaya-Angel
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Thermal Desorption ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Mbe Growth

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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