In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells
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AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.
1987 ◽
Vol 68
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pp. 283-294
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2003 ◽
Vol 34
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pp. 1633-1645
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1993 ◽
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pp. 1011
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1989 ◽
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pp. 3088-3094
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1991 ◽
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pp. 2048
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1990 ◽
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pp. 1726-1731
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2012 ◽
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pp. C04017-C04017
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1998 ◽
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pp. 3339
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