Real-time monitoring of Si1–xGex heteroepitaxial growth using laser light scattering and spectroscopic ellipsometry

1995 ◽  
Vol 152 (1) ◽  
pp. 95-102 ◽  
Author(s):  
C. Pickering ◽  
R. T. Carline ◽  
D. A. O. Hope ◽  
D. J. Robbins
Keyword(s):  
Light Scattering ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Heteroepitaxial Growth ◽  
Real Time Monitoring

Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

1993 ◽  
Vol 127 (1-4) ◽  
pp. 966-971 ◽  
Author(s):  
G.W. Smith ◽  
A.J. Pidduck ◽  
C.R. Whitehouse ◽  
J.L. Glasper ◽  
J. Spowart
Keyword(s):  
Light Scattering ◽  
Surface Topography ◽  
Real Time ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Mbe Growth

Real-time turning surface inspection using laser light scattering

2009 ◽  
Author(s):  
Arturo Moreno-Báez ◽  
Gerardo Miramontes de León ◽  
Francisco Tenorio-Pérez ◽  
Maximiano Ruiz-Torres ◽  
Jorge A. Huerta-Ruelas
Keyword(s):  
Light Scattering ◽  
Real Time ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Surface Inspection

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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