Initial growth of GaAs on Si(111) substrates by molecular beam epitaxy

1995 ◽  
Vol 154 (1-2) ◽  
pp. 85-91 ◽  
Author(s):  
Tokuo Yodo ◽  
Masao Tamura
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth ◽  
Gaas On Si

Effect of As4overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

1989 ◽  
Vol 55 (10) ◽  
pp. 990-992 ◽  
Author(s):  
J. E. Palmer ◽  
G. Burns ◽  
C. G. Fonstad ◽  
C. V. Thompson
Keyword(s):  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Initial Growth

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy

1991 ◽  
Vol 59 (23) ◽  
pp. 2983-2985 ◽  
Author(s):  
T. Kawai ◽  
H. Yonezu ◽  
Y. Yamauchi ◽  
Y. Takano ◽  
K. Pak
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Initial Growth

Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects

1991 ◽  
Author(s):  
Paul Panayotatos ◽  
Alexandros Georgakilas ◽  
Jean-Loic Mourrain ◽  
Aristos Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Interconnects ◽  
Molecular Beam ◽  
Gaas On Si

Study on initial growth process of Si on InP(100) substrate grown by molecular beam epitaxy

1993 ◽  
Vol 131 (3-4) ◽  
pp. 316-322 ◽  
Author(s):  
Hiroyuki Maruyama ◽  
Kangsa Pak ◽  
Kenji Sakakibara ◽  
Hiroo Yonezu ◽  
Yasushi Takano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Initial Growth
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