Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 26 (Part 2, No. 6) ◽  
pp. L944-L946 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Antiphase Boundary ◽  
Gaas On Si

Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects

1991 ◽  
Author(s):  
Paul Panayotatos ◽  
Alexandros Georgakilas ◽  
Jean-Loic Mourrain ◽  
Aristos Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Interconnects ◽  
Molecular Beam ◽  
Gaas On Si

Growth of Single Domain GaAs on Si(100) by Molecular Beam Epitaxy

1985 ◽  
Author(s):  
Seiji Nishi ◽  
Masahiro Akiyama ◽  
Katsuzo Kaminishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si
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