Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L285-L287 ◽  
Author(s):  
Mitsuo Kawabe ◽  
Toshio Ueda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

Growth of Single Domain GaAs on Si(100) by Molecular Beam Epitaxy

1985 ◽  
Author(s):  
Seiji Nishi ◽  
Masahiro Akiyama ◽  
Katsuzo Kaminishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Domain ◽  
Gaas On Si

GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer

1987 ◽  
Vol 94 ◽  
Author(s):  
R. D. Bringans ◽  
M. A. Olmstead ◽  
R. I. G. Uhrberg ◽  
R. Z. Bachrach
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Core Level ◽  
Single Domain ◽  
Island Formation ◽  
Si Substrates ◽  
Gaas On Si ◽  
Si Epitaxy

ABSTRACTCore level spectroscopy measurements have been made on Si substrates with coverages of around one monolayer of As, Ga and GaAs. The interfaces were formed on on-axis Si(100) and Si(111) substrates using molecular beam epitaxy. Results are also presented for an arsenic monolayer on a single-domain Si(100) surface prepared by cutting the crystal off-axis by 4 degrees. The strong bonding between As monolayers and the surface of the substrate causes the GaAs to begin to form islands at average coverages of less than one monolayer. The surface between the islands is found to be terminated by a single atomic layer of As. Use of a Ga predeposition technique shows evidence of reducing the tendancy towards island formation.

Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects

1991 ◽  
Author(s):  
Paul Panayotatos ◽  
Alexandros Georgakilas ◽  
Jean-Loic Mourrain ◽  
Aristos Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Interconnects ◽  
Molecular Beam ◽  
Gaas On Si
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