Formation of H2O2 at the illuminated TiO2 film electrode prepared by the Sol—Gel method and its chemical states

1986 ◽  
Vol 209 (2) ◽  
pp. 399-404 ◽  
Author(s):  
Toshinobu Yoko ◽  
Kanichi Kamiya ◽  
Akira Yuasa ◽  
Sumio Sakka
Materials ◽  
2018 ◽  
Vol 11 (3) ◽  
pp. 450 ◽  
Author(s):  
Yu Liang ◽  
Sijia Sun ◽  
Tongrong Deng ◽  
Hao Ding ◽  
Wanting Chen ◽  
...  

Silicon ◽  
2017 ◽  
Vol 10 (3) ◽  
pp. 913-920 ◽  
Author(s):  
A. Tataroğlu ◽  
Abdullah G. Al-Sehemi ◽  
M. Ilhan ◽  
Ahmed A. Al-Ghamdi ◽  
F. Yakuphanoglu

2011 ◽  
Vol 299-300 ◽  
pp. 558-561 ◽  
Author(s):  
Yan Jun Zhou ◽  
Fang He ◽  
Jin Gang Qi ◽  
Yu Lin Wang

By using the sol-gel method, TiO2 thin films and Ge doped TiO2 composite thin films were fabricated onto quartz substrates. XRD, XPS and UV-vis were used to characterize the phase structure, the atomic chemical states and optical absorption of these composite TiO2 thin films. XRD results indicate that diffraction peak of anatase is observed in samples. XPS result reveals that there is Ge crystal in Ge doped films which were prepared by sol-gel method, and Ge exists as elemental Ge and GeO2 in the films. The composite TiO2 thin films by sol-gel method exhibits the absorption shift to visible region due to Ge doped TiO2 thin films.


2011 ◽  
Vol 257 (21) ◽  
pp. 8772-8777 ◽  
Author(s):  
Junhua Hu ◽  
Caili Zhang ◽  
Baohong Cui ◽  
Kuifeng Bai ◽  
Shaokang Guan ◽  
...  

1994 ◽  
Vol 26 (1-2) ◽  
pp. 141-147 ◽  
Author(s):  
S. Sato ◽  
H. Koshiba ◽  
H. Minakami ◽  
N. Kakuta ◽  
A. Ueno
Keyword(s):  
Sol Gel ◽  

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