Electron spin resonance and electronic structure of the fluoromalonyl radical, CF(CO2−)2 )2

1970 ◽  
Vol 2 (1) ◽  
pp. 9-18 ◽  
Author(s):  
F.G Herring ◽  
W.C Lin ◽  
M.R Mustafa
Keyword(s):  
Electronic Structure ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance

Electron Spin Resonance and Electronic Structure of Vanadyl−Porphyrin in Heavy Crude Oils

2001 ◽  
Vol 40 (18) ◽  
pp. 4543-4549 ◽  
Author(s):  
Marcela Espinosa P. ◽  
Antonio Campero ◽  
Roberto Salcedo
Keyword(s):  
Electronic Structure ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Crude Oils ◽  
Vanadyl Porphyrin ◽  
Spin Resonance ◽  
Heavy Crude

Low-spin ferric porphyrin complexes: analysis of the electronic structure based on single-crystal electron spin resonance measurements

1983 ◽  
Vol 105 (15) ◽  
pp. 4916-4922 ◽  
Author(s):  
Marianne P. Byrn ◽  
Bradley A. Katz ◽  
Nancy L. Keder ◽  
Keith R. Levan ◽  
Charles J. Magurany ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Spin Resonance ◽  
Single Crystal ◽  
Electron Spin ◽  
Spin Resonance ◽  
Crystal Electron

Electronic Structure ofFCenters: Hyperfine Interactions in Electron Spin Resonance

1953 ◽  
Vol 91 (5) ◽  
pp. 1066-1071 ◽  
Author(s):  
A. F. Kip ◽  
C. Kittel ◽  
R. A. Levy ◽  
A. M. Portis
Keyword(s):  
Electronic Structure ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Hyperfine Interactions ◽  
Spin Resonance

Electronic Structure of Si-Si Bond in Si3n4 and Sio2: Experiment and Simulation by Mindo/3

1996 ◽  
Vol 446 ◽  
Author(s):  
V.A. Gritsenko ◽  
A.D. Milov ◽  
Yu.N. Morokov ◽  
Yu.N. Novikov ◽  
H. Wong ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Spin Resonance ◽  
Spin Polarization ◽  
Electron Spin ◽  
Resonance Tunneling ◽  
Antiferromagnetic Ordering ◽  
Deep Traps ◽  
Spin Resonance ◽  
Made In ◽  
Localized Electrons

AbstractThe trapping properties of the Si-Si bond in Si3N4 and SiO2 were investigated. The MINDO/3 calculations show that the spin polarization of the Si-Si bond with a captured hole takes place in both SiO2 and Si3N4. The ESR (Electron Spin Resonance) measurements were made in Si3N4 with captured electrons and holes. The number of localized carriers was of two orders of magnitude larger than that used by others. The ESR signal of localized electrons and holes was not observed. A new mechanism of the antiferromagnetic ordering of localized electrons and holes in an insulator with a large concentration of traps is proposed. According to this mechanism, the antiferromagnetic ordering in Si3N4 may be caused by the resonance tunneling of localized spins through nonoccupied traps. We believe that the deep traps responsible for the electron and hole capturing in Si3N4 are the Si-Si bonds.

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