Rare-earths: Application in bulk lll-V semiconductor crystal growth technology

1995 ◽  
Vol 26 (1) ◽  
pp. 55-67 ◽  
Author(s):  
Leonid F. Zakharenkov
1993 ◽  
Vol 301 ◽  
Author(s):  
Leo Zakharenkov

The problem of manufacturing high purity semiconductor materials with super high electron mobility is among important, though technologically difficult ones.Traditional with regard to III-V compounds this problem has been solved using the following technique- the choice of alternative crucible material- the application of high purity initial materials- oxygen doping for shallow donors removal- isoelectronic doping (e.g. bismuth)We can also mention other attractive directions in this sphere of activity, such as secondary methods of influence upon the crystals grown - heat treatment and purification by radiation methods, the latter ones still wanting being explored.From the late 70's we have been carrying out the investigations of the rare-earths (RE) influence upon the electrical characteristics of InP, and later - of GaAs.In this work submitted are the results of comprehensive investigation of RE applications in bulk III-V crystal growth technology with the aim of purification and heavy doping of the crystals.


Hyomen Kagaku ◽  
2010 ◽  
Vol 31 (12) ◽  
pp. 625-625
Author(s):  
Hajime ASAHI

1998 ◽  
Author(s):  
Ch. Stenzel ◽  
H. Lenski ◽  
P. Dold ◽  
Th. Kaiser ◽  
K.-W. Benz ◽  
...  

Author(s):  
Kei Kamada ◽  
Hiroaki Yamaguchi ◽  
Nobuhiro Yasui ◽  
Ryota Ohashi ◽  
Toru Den ◽  
...  

1980 ◽  
Vol 50 (1) ◽  
pp. xi-xii ◽  
Author(s):  
G.W. Cullen ◽  
T. Surek

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