Rare-Earths Applications in III-V Crystal Growth Technology.

1993 ◽  
Vol 301 ◽  
Author(s):  
Leo Zakharenkov
Keyword(s):  
Crystal Growth ◽  
Rare Earths ◽  
High Purity ◽  
High Electron ◽  
Electrical Characteristics ◽  
Crucible Material ◽  
Isoelectronic Doping ◽  
Heavy Doping ◽  
Secondary Methods ◽  
Growth Technology

The problem of manufacturing high purity semiconductor materials with super high electron mobility is among important, though technologically difficult ones.Traditional with regard to III-V compounds this problem has been solved using the following technique- the choice of alternative crucible material- the application of high purity initial materials- oxygen doping for shallow donors removal- isoelectronic doping (e.g. bismuth)We can also mention other attractive directions in this sphere of activity, such as secondary methods of influence upon the crystals grown - heat treatment and purification by radiation methods, the latter ones still wanting being explored.From the late 70's we have been carrying out the investigations of the rare-earths (RE) influence upon the electrical characteristics of InP, and later - of GaAs.In this work submitted are the results of comprehensive investigation of RE applications in bulk III-V crystal growth technology with the aim of purification and heavy doping of the crystals.

Development of large size crystal growth technology of oxide eutectic scintillator and a proto-type Talbot-Lau imaging system

2020 ◽  
Author(s):  
Kei Kamada ◽  
Hiroaki Yamaguchi ◽  
Nobuhiro Yasui ◽  
Ryota Ohashi ◽  
Toru Den ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Imaging System ◽  
Large Size ◽  
Growth Technology

Crystal growth morphology in high purity white phosphorus

1977 ◽  
Vol 37 (1) ◽  
pp. 64-68 ◽  
Author(s):  
J.D. Ayers ◽  
R.J. Schaefer ◽  
M.E. Glicksman
Keyword(s):  
Crystal Growth ◽  
High Purity ◽  
White Phosphorus ◽  
Growth Morphology

Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Large Diameter ◽  
Ozone Exposure ◽  
Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Doklady BGUIR ◽  
2022 ◽  
Vol 19 (8) ◽  
pp. 81-86
Author(s):  
I. Yu. Lovshenko ◽  
A. Yu. Voronov ◽  
P. S. Roshchenko ◽  
R. E. Ternov ◽  
Ya. D. Galkin ◽  
...  
Keyword(s):  
Field Effect ◽  
Proton Energy ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Proton Flux ◽  
High Electron ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Dual Channel ◽  
Effect Transistor

The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current ID and cut-off voltage on the fluence value and proton energy, as well as on the ambient temperature are shown.

scholarly journals Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C

2019 ◽  
Vol 117 (2) ◽  
pp. 902-906 ◽  
Author(s):  
Mark Hettick ◽  
Hao Li ◽  
Der-Hsien Lien ◽  
Matthew Yeh ◽  
Tzu-Yi Yang ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Indium Tin Oxide ◽  
High Performance ◽  
High Growth ◽  
Oxide Semiconductor ◽  
High Electron ◽  
Lattice Match ◽  
Direct Growth ◽  
Shape Controlled

III–V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III–Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid-phase (TLP) crystal growth method for enabling direct growth of shape-controlled single-crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g., 156.6 °C for indium), previous experiments required a minimum growth temperature of 500 °C, thus being incompatible with many application-specific substrates. Here, we demonstrate low-temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO)–coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

Chemical process to normalize the electrical properties of a-Se

1986 ◽  
Vol 1 (1) ◽  
pp. 10-11 ◽  
Author(s):  
S. S. Badesha ◽  
M. A. Abkowitz ◽  
F. E. Knier
Keyword(s):  
Electrical Properties ◽  
High Purity ◽  
Chemical Process ◽  
Vacuum Evaporation ◽  
Amorphous Selenium ◽  
Electrical Characteristics ◽  
Prior Work ◽  
Amorphous Films ◽  
Specific Chemical ◽  
Chemical Procedure

The influence of specific chemical dopants on the electrophotographic behavior of selenium and its alloys has been established in prior work. This communication describes a chemical procedure that has been found effective in removing electronically active impurities from amorphous selenium. The methodology involves converting contaminated selenium into a chemical intermediate that is separated by selective alcoholic dissolution and then reduced to high-purity selenium. The electrical characteristics of the amorphous films obtained by vacuum evaporation of the latter are determined directly from analysis of xerographic potentials.

GaN single crystal growth using high-purity Na as a flux

2002 ◽  
Vol 242 (1-2) ◽  
pp. 70-76 ◽  
Author(s):  
Masato Aoki ◽  
Hisanori Yamane ◽  
Masahiko Shimada ◽  
Seiji Sarayama ◽  
Francis J DiSalvo
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
High Purity ◽  
Single Crystal Growth
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