On the distribution of optical excitation in a one-dimensional random chain

Physica ◽  
1971 ◽  
Vol 51 (2) ◽  
pp. 240-245
Author(s):  
E. Majerníková
1974 ◽  
Vol 10 (3) ◽  
pp. 1109-1112 ◽  
Author(s):  
P. F. Williams ◽  
M. A. Butler ◽  
D. L. Rousseau ◽  
Aaron N. Bloch

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Alexander Palatnik ◽  
Markas Sudzius ◽  
Stefan Meister ◽  
Karl Leo

Abstract Topological interface states are formed when two photonic crystals with overlapping band gaps are brought into contact. In this work, we show a planar binary structure with such an interface state in the visible spectral region. Furthermore, we incorporate a thin layer of an active organic material into the structure, providing gain under optical excitation. We observe a transition from fluorescence to lasing under sufficiently strong pump energy density. These results are the first realization of a planar topological laser, based on a topological interface state instead of a cavity like most of other laser devices. We show that the topological nature of the resonance leads to a so-called “topological protection”, i.e. stability against layer thickness variations as long as inversion symmetry is preserved: even for large changes in thickness of layers next to the interface, the resonant state remains relatively stable, enabling design flexibility superior to conventional planar microcavity devices.


2013 ◽  
Vol 103 (25) ◽  
pp. 253109 ◽  
Author(s):  
A. Gamouras ◽  
M. Britton ◽  
M. M. Khairy ◽  
R. Mathew ◽  
D. Dalacu ◽  
...  

2018 ◽  
Vol 5 (2) ◽  
pp. 025101 ◽  
Author(s):  
T. Frigge ◽  
B. Hafke ◽  
T. Witte ◽  
B. Krenzer ◽  
M. Horn-von Hoegen

2020 ◽  
Vol 62 (10) ◽  
pp. 1606
Author(s):  
Н.Н. Васильев ◽  
Е.Н. Борисов ◽  
Б.В. Новиков

The near-edge luminescence of zinc oxide epitaxial film grown by molecular-beam epitaxy on a sapphire substrate was studied. Under an optical excitation increase at room temperature, the luminescence spectrum changes radically and a new band appears with a maximum of ~ 3.17 eV. It has features of stimulated emission i.e. a threshold of nonlinear growth and narrowing of the half-width. Using the model of a one-dimensional amplifier and experimental data, the gain spectrum was calculated, with maximal value being 170 cm– 1. The analysis of theoretical approaches for calculating the Mott concentration is carried out. For the first time it is shown that nearby the threshold intensity the observed stimulated emission is originated from the second phonon replica of the exciton.


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