A new experimental method for the determination of the one phonon density of states in GaAs

1982 ◽  
Vol 41 (7) ◽  
pp. 557-560 ◽  
Author(s):  
R. Carles ◽  
A. Zwick ◽  
M.A. Renucci ◽  
J.B. Renucci
2000 ◽  
Vol 61 (22) ◽  
pp. R14881-R14884 ◽  
Author(s):  
A. Barla ◽  
R. Rüffer ◽  
A. I. Chumakov ◽  
J. Metge ◽  
J. Plessel ◽  
...  

1995 ◽  
Vol 395 ◽  
Author(s):  
C.-K. Loong

ABSTRACTPhonons are thought to play a crucial role in the high thermal conductivity of AIN and ZrN. Using time-of-flight neutron spectroscopy, we have measured the phonon spectra of A1N and ZrN up to 300 meV (2400 cm−1). The one-phonon density of states (DOS) of AIN exhibits relatively sharp bands at about 33, 63, 83 and 91 meV. In addition, distinct multiple-phonon excitations were observed at ∼173 and 255 meV. The phonon DOS of ZrN displays similar features with the corresponding phonon energies shifted toward lower energies. The measured DOS of AIN is compared with results of molecular-dynamics simulations.


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