Calculation of the electronic band structure for the hole-metal state of iodine in high-pressure phase

1982 ◽  
Vol 44 (7) ◽  
pp. 1105-1107 ◽  
Author(s):  
Y. Natsume ◽  
T. Suzuki
Keyword(s):  
High Pressure ◽  
Band Structure ◽  
Electronic Band Structure ◽  
High Pressure Phase ◽  
Electronic Band ◽  
Metal State ◽  
Pressure Phase

Crystal lattice and band structure of the intermediate high-pressure phase of PbSe

2009 ◽  
Vol 21 (38) ◽  
pp. 385501 ◽  
Author(s):  
S V Streltsov ◽  
A Yu Manakov ◽  
A P Vokhmyanin ◽  
S V Ovsyannikov ◽  
V V Shchennikov
Keyword(s):  
High Pressure ◽  
Band Structure ◽  
Crystal Lattice ◽  
High Pressure Phase ◽  
Pressure Phase

BAND STRUCTURE, METALLIZATION AND SUPERCONDUCTIVITY OF InP AND InN UNDER HIGH PRESSURE

2012 ◽  
Vol 11 (01) ◽  
pp. 19-33 ◽  
Author(s):  
A. AMAL RAJ ◽  
C. NIRMALA LOUIS ◽  
V. REJILA ◽  
K. IYAKUTTI
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Band Structure ◽  
Structural Phase Transition ◽  
Electronic Band Structure ◽  
Indium Nitride ◽  
Structural Phase ◽  
Superconducting Transition ◽  
Electronic Band ◽  
Lmto Method

The electronic band structure, structural phase transition, metallization and superconducting transition of cubic zinc blende type indium phosphide (InP) and indium nitride (InN), under pressure, are studied using FP-LMTO method. These indium compounds become metals and superconductors under high pressure but before that they undergo structural phase transition from ZnS to NaCl structure. The ground state properties and band gap values are compared with the experimental and previous theoretical results. From our analysis, it is found that the metallization pressure increases with increase of lattice constant. The superconducting transition temperatures (Tc) of InP and InN are obtained as a function of pressure for both the ZnS and NaCl structures and these compounds are identified as pressure induced superconductors. When pressure is increased Tc increases in both the normal ( ZnS ) and high pressure ( NaCl ) structures. The dependence of Tc on electron–phonon mass enhancement factor λ shows that InP and InN are electron–phonon mediated superconductors. The non-occurrence of metallization, phase transition and onset of superconductivity simultaneously in InP and InN is confirmed.

BAND STRUCTURE, METALLIZATION, AND SUPERCONDUCTIVITY OF GaAs AND InAs UNDER HIGH PRESSURE

2007 ◽  
Vol 06 (04) ◽  
pp. 833-843 ◽  
Author(s):  
A. AMALRAJ ◽  
C. NIRMALA LOUIS ◽  
SR. GERARDIN JAYAM
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Band Structure ◽  
Structural Phase Transition ◽  
Electronic Band Structure ◽  
Structural Phase ◽  
Normal Structure ◽  
Superconducting Transition ◽  
Electronic Band ◽  
Phase Transition Pressure

The electronic band structure, metallization, structural phase transition, and superconductivity of cubic zinc blende type GaAs and InAs are investigated. The equilibrium lattice constant, bulk modulus, and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) get enhanced after metallization, which leads to the superconductivity in GaAs and InAs . The superconducting transition temperatures (T c ) of GaAs and InAs are obtained as a function of pressure for both the ZnS and NaCl structures. GaAs and InAs come under the class of pressure-induced superconductors. When pressure is increased T c increases in both the normal and high pressure-structures. The dependence of T c on electron–phonon mass enhancement factor λ shows that GaAs and InAs are electron–phonon-mediated superconductors. Also, it is found that GaAs and InAs retained in their normal structure under high pressure give appreciably high T c .

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