Analysis of InN/La2O3 Twosome for Double-Gate MOSFETs for Radio Frequency Applications

The channel material of a gate describes the operating condition of the MOSFET. A suitable operating condition prevails in MOSFETs if the transistors are quite enough to observe and control at the nanometer regime. An efficient gate and channel material have been proposed in this work which is based on the electrical properties they exhibit at the temperature of 300K. The doping concentration for the electrons and holes is maintained to be 1Χ1019cm-3 for the entire electronic simulator. The simulation results show that using La2O3 along with Indium Nitride (InN) material for the designing of Double-Gate (DG) MOSFETs provides better controllability over the transistor at a channel length of 50nm. This proposed DG-MOSFET is more compliant than the conventional coplanar MOSFETs based on Silicon.

Simulation Result of Gallium Indium Nitride Solar Cells

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.

Strong tribo-piezoelectric effect in bilayer indium nitride (InN)

The high electronegativity between the atoms of two-dimensional (2D) group-III nitrides makes them attractive to demonstrating a strong out-of-plane piezo-electricity effect. Energy harvesting devices can be predicted by cultivating such salient piezoelectric features. This work explores the tribo-piezoelectric properties of 2D-indium nitride (InN) as a promising candidate in nanogenerator applications by means of first-principles calculations. In-plane interlayer sliding between two InN monolayers leads to a noticeable rise of vertical piezoelectricity. The vertical resistance between the InN bilayer renders tribological energy by the sliding effect. During the vertical sliding, a shear strength of 6.6–9.7 GPa is observed between the monolayers. The structure can be used as a tribo-piezoelectric transducer to extract force and stress from the generated out-of-plane tribo-piezoelectric energy. The A–A stacking of the bilayer InN elucidates the highest out-of-plane piezoelectricity. Any decrease in the interlayer distance between the monolayers improves the out-of-plane polarization and thus, increases the inductive voltage generation. Vertical compression of bilayer InN produces an inductive voltage in the range of 0.146–0.196 V. Utilizing such a phenomenon, an InN-based bilayer compression-sliding nanogenerator is proposed, which can tune the generated tribo-piezoelectric energy by compressing the interlayer distance between the InN monolayers. The considered model can render a maximum output power density of ~ 73 mWcm−2 upon vertical sliding.

Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique

We report on the growth and characterization of undoped indium nitride (InN) thin films grown on a silicon substrate. The InN thin films were grown on aluminium nitride (AlN) template with gallium nitride (GaN) nucleation layer using a relatively simple and low-cost sol–gel spin coating method. The crystalline structure and optical properties of the deposited films were investigated. X-ray diffraction and Raman results revealed that InN thin films with wurtzite structure were successfully grown. For InN thin film grown on a substrate with the GaN nucleation layer, its strain and dislocation density are lower than that of the substrate with the AlN nucleation layer. From the ultra-violet-visible diffuse reflectance spectrum analysis, the energy bandgap of the InN thin films with the GaN layer was 1.70 eV. The potential application of the sol–gel spin-coated InN thin films was also explored. Metal–semiconductor–metal (MSM) infrared (IR) photodetectors were fabricated by depositing the platinum contacts using two interdigitated electrodes metal mask on the samples. The finding shows that the device demonstrates good sensitivity and repeatability towards IR excitation at a wavelength of 808 nm. The photodetector characteristics at dark and photocurrent conditions such as Schottky barrier height (SBH) and ideality factor are determined. Upon exposure to the IR source at 3V applied bias, InN/AlN/Si device configuration displays rapid rise time of 0.85 s and decay time of 0.78 s, while InN/GaN/AlNSi demonstrates slow rise time of 7.45 s and decay time of 13.75 s.

Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1−xN Quantum Dot Solar Cells

Solar cells that are based on the implementation of quantum dots in the intrinsic region, so-called intermediate band solar cells (IBSCs), are among the most widely used concepts nowadays for achieving high solar conversion efficiency. The principal characteristics of such solar cells relate to their ability to absorb low energy photons to excite electrons through the intermediate band, allowing for conversion efficiency exceeding the limit of Shockley–Queisser. IBSCs are generating considerable interest in terms of performance and environmental friendliness. However, there is still a need for optimizing many parameters that are related to the solar cells, such as the size of quantum dots, their shape, the inter-dot distance, and choosing the right material. To date, most studies have only focused on studying IBSC composed of cubic shape of quantum dots. The main objective of this study is to extend the current knowledge of IBSC. Thus, we analyze the effect of the shape of the quantum dot on the electronic and photonic characteristics of indium nitride and indium gallium nitride multiple quantum dot solar cells structure considering cubic, spherical, and cylindrical quantum dot shapes. The ground state of electrons and holes energy levels in quantum dot are theoretically determined by considering the Schrödinger equation within the effective mass approximation. Thus, the inter and intra band transitions are determined for different dot sizes and different inter dot spacing. Consequently, current–voltage (J-V) characteristic and efficiencies of these devices are evaluated and compared for different shapes. Our calculations show that, under fully concentrated light, for the same volume of different quantum dots (QD) shapes and a well determined In-concentration, the maximum of the photovoltaic conversion efficiencies reaches 63.04%, 62.88%, and 62.43% for cubic, cylindrical, and spherical quantum dot shapes, respectively.