Spin-orbit interaction and many-body effects in surface states of silicon MOSFETS

1978 ◽  
Vol 73 ◽  
pp. 342-349 ◽  
Author(s):  
A. Campo ◽  
R. Kümmel ◽  
H. Rauh
2021 ◽  
Vol 11 (5) ◽  
pp. 171-179
Author(s):  
Nóra Kucska ◽  
Zsolt Gulácsi

We deduct conditions for the Hamiltonian coupling strengths necessary to achieve flat bands in polymers (i.e. a pentagon chain) considering many-body spin-orbit coupling and external magnetic field. We consider itinerant electrons on pentagon chains with first neighbour hoppings, on-site electron potentials and spin-flip first neighbour hoppings representing the Rashba type spin-orbit interaction (SOI). The external magnetic field is also present in the system via the Peierls phase factors. The band structure is obtained by solving the secular equation of the diagonalized one particle part of the Hamiltonian in k-space (momentum-space). The flat band conditions make the bands k-independent, providing a highly a degenerate state, which gives broad possibilities for applications. In our work we have shown how the SOI is able to relax the strict, rigid flat band conditions given by the Hamiltonian coupling strengths. The role of the external magnetic field was also investigated.


2015 ◽  
Vol 91 (4) ◽  
Author(s):  
Ryan Requist ◽  
Polina M. Sheverdyaeva ◽  
Paolo Moras ◽  
Sanjoy K. Mahatha ◽  
Carlo Carbone ◽  
...  

2018 ◽  
Vol 93 (4) ◽  
pp. 177-188 ◽  
Author(s):  
Ryuichi Arafune ◽  
Noriaki Takagi ◽  
Hiroshi Ishida

Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  

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