High spatial resolution, Auger electron spectroscopy

Auger electron spectroscopy (AES) is a surface sensitive microanalytical technique. Auger electrons are only detected from the top few atomic layers due to their very small inelastic mean free paths. The lateral spatial resolution of AES of thin samples is dominated by the excitation beam profile. Thin samples are defined as having a thickness which is much smaller than the back-scattered electron range at the incident beam energy. Utilizing high current density nanometer-sized probes available in field emission gun STEMs, AES signals extracted from sample regions as small as a few atoms should be detectable. However, the extremely low production efficiency for Auger electrons makes this atomic scale resolution difficult to achieve in practice.We have achieved nanometer spatial resolution AES in our modified Vacuum Generators HB-501S. In this instrument secondary electrons emitted from either surface of the sample are efficiently collected using the collimating properties of the objective lens field, a sample bias potential and additional solenoidal focusing coils.

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Variations of surface roughness for deposition of Co-sputtered-ZnO(002) by Auger electron spectroscopy and surface magneto-optic Faraday effect

The European Physical Journal Applied Physics ◽

10.1051/epjap/2010100312 ◽

2011 ◽

Vol 53 (2) ◽

pp. 21501 ◽

Cited By ~ 3

Author(s):

Y.-C. Chang ◽

C.-W. Su ◽

S.-C. Chang ◽

Y.-H. Lee

Keyword(s):

Surface Roughness ◽

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Faraday Effect ◽

Magneto Optic

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The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

MRS Proceedings ◽

10.1557/proc-766-e3.15 ◽

2003 ◽

Vol 766 ◽

Cited By ~ 3

Author(s):

Sungjin Hong ◽

Seob Lee ◽

Yeonkyu Ko ◽

Jaegab Lee

Keyword(s):

Low Temperature ◽

Auger Electron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Si Substrate ◽

Copper Silicide ◽

Alloy Films ◽

Cu Alloy ◽

Cu Film ◽

Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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