Crystal growth theory and techniques, vols 1 and 2,

1979 ◽  
Vol 1 (4) ◽  
pp. 431-432
Author(s):  
Brian Pamplin
Keyword(s):  
1979 ◽  
Vol 30 (10) ◽  
pp. 439-439
Author(s):  
J A Champion
Keyword(s):  

2006 ◽  
Vol 21 (2) ◽  
pp. 375-379 ◽  
Author(s):  
Y. Chen ◽  
H.M. Wang

Growth morphologies and mechanisms of the carbide of group IVB and VB elements (MC carbide), a typical faceted crystal, were studied with an estimated cooling rate from 102 to 105 K/s. Results showed that although the growth morphologies of the MC carbide vary remarkably with solidification cooling rate, the solid/liquid interface is always atomically smooth, and the growth mechanisms are always lateral growth. The growth mechanism transition from lateral to continuous growth mode, which was predicted by the classic crystal growth theory, was not observed for the TiC type MC carbide within the estimated cooling rate range of 102–105 K/s.


2017 ◽  
Vol 139 ◽  
pp. 109-121 ◽  
Author(s):  
D.M. Stefanescu ◽  
G. Alonso ◽  
P. Larrañaga ◽  
E. De la Fuente ◽  
R. Suarez
Keyword(s):  

2014 ◽  
Vol 72 (3) ◽  
pp. 345 ◽  
Author(s):  
Lu Wang ◽  
Junfeng Gao ◽  
Feng Ding

2013 ◽  
Vol 15 (4) ◽  
pp. 429-450 ◽  
Author(s):  
Mi-Ho Giga ◽  
Yoshikazu Giga
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document