Band effect on the charge exchange process at solid surfaces

1987 ◽  
Vol 186 (3) ◽  
pp. 278
Author(s):  
Shinji Tsuneyuki ◽  
Nobuyuki Shima ◽  
Masaru Tsukada
Keyword(s):  
Charge Exchange ◽  
Exchange Process ◽  
Solid Surfaces ◽  
Charge Exchange Process

Band effect on the charge exchange process at solid surfaces

1987 ◽  
Vol 186 (1-2) ◽  
pp. A278
Author(s):  
Shinji Tsuneyuki ◽  
Nobuyuki Shima ◽  
Masaru Tsukada
Keyword(s):  
Charge Exchange ◽  
Exchange Process ◽  
Solid Surfaces ◽  
Charge Exchange Process

Band effect on the charge exchange process at solid surfaces

1987 ◽  
Vol 186 (1-2) ◽  
pp. 26-44 ◽  
Author(s):  
Shinji Tsuneyuki ◽  
Nobuyuki Shima ◽  
Masaru Tsukada
Keyword(s):  
Charge Exchange ◽  
Exchange Process ◽  
Solid Surfaces ◽  
Charge Exchange Process

Low Temperature Phase Transition (Pt) and Defect Formation (Df) in Silicon with Dioxide Inclusions Under X-Ray Irradiation

1995 ◽  
Vol 396 ◽  
Author(s):  
SH.M. Makhkamov ◽  
S.N. Abdurakhmanova
Keyword(s):  
Phase Transition ◽  
Charge Exchange ◽  
Defect Formation ◽  
Exchange Process ◽  
Temperature Phase ◽  
X Rays ◽  
Charge Exchange Process ◽  
X Ray ◽  
Temperature Phase Transition ◽  
A Charge

AbstractStudies of galvanomagnetic and electrical parameters of p- type Si : SiO2 in the temperature range 80 – 400 K have shown that X-ray irradiation at 80 K (Mo Ka,β and braking radiation hvmax. = 50 heV) leads to various transformations of the spectrum of electron- hole states in the band gap of such material, depending on the flux density of the X-rays. Two main processes are observed: the defect (vacancy and divacancy) formation and a charge exchange of native defects localized at the Si – SiO2 interface. The charge exchange process is rather collective and stimulated one because it is in response to an X-ray-induced ferroelectric phase transition in the SiO2- phase.

scholarly journals Modeling of the Hα Emission from ADITYA Tokamak Plasmas

Atoms ◽  
2019 ◽  
Vol 7 (4) ◽  
pp. 95
Author(s):  
Ritu Dey ◽  
Malay B. Chowdhuri ◽  
Joydeep Ghosh ◽  
Ranjana Manchanda ◽  
Nandini Yadava ◽  
...  
Keyword(s):  
Charge Exchange ◽  
Molecular Hydrogen ◽  
Neutral Particle ◽  
Exchange Process ◽  
Neutral Hydrogen ◽  
Spatial Profile ◽  
Charge Exchange Process ◽  
Neutral Particle Transport ◽  
Particle Penetration ◽  
Hα Emission

The spatial profile of Hα spectrum is regularly measured using a high-resolution multi-track spectrometer in ADITYA tokamak to study the neutral particle behavior. The Monte Carlo neutral particle transport code DEGAS2 is used to model the experimental Hα spectral emissions. Through the modeling of the spectral line profile of Hα, it is found that the neutral hydrogen, which is produced from molecular hydrogen and molecular hydrogen ion dissociation processes contributes 56% to the total Hα emission, and the atoms which are produced from charge-exchange process have 30% contribution. Furthermore, the experimentally measured spatial profile of chord integrated brightness was modeled for the two plasma discharges having relatively high and low density to understand the neutral particle penetration. The presence of neutrals inside the core region of the ADITYA tokamak is mainly due to the charge-exchange process. Furthermore, it is observed that neutral particle penetration is lower in higher density discharge.

Study of the charge exchange process at low energy with REXTRAP

2004 ◽  
Vol 746 ◽  
pp. 604-607 ◽  
Author(s):  
P. Delahaye ◽  
F. Ames ◽  
A. Kellerbauer
Keyword(s):  
Charge Exchange ◽  
Exchange Process ◽  
Low Energy ◽  
Charge Exchange Process
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