Diffusion and interactions of point defects in silicon: molecular dynamics simulations

Author(s):  
G.H. Gilmer ◽  
T. Diaz de la Rubia ◽  
D.M. Stock ◽  
M. Jaraiz
1995 ◽  
Vol 396 ◽  
Author(s):  
M. tang ◽  
L. colombo ◽  
T. Diaz De La Rubia

AbstractTight-binding molecular dynamics (TBMD) simulations are performed (i) to evaluate the formation and binding energies of point defects and defect clusters, (ii) to compute the diffusivity of self-interstitial and vacancy in crystalline silicon, and (iii) to characterize the diffusion path and mechanism at the atomistic level. In addition, the interaction between individual defects and their clustering is investigated.


2012 ◽  
Vol 21 (2) ◽  
pp. 026103 ◽  
Author(s):  
Bing-Yun Ao ◽  
Ji-Xing Xia ◽  
Pi-Heng Chen ◽  
Wang-Yu Hu ◽  
Xiao-Lin Wang

Soft Matter ◽  
2021 ◽  
Author(s):  
Gaurav Prakash Shrivastav ◽  
Gerhard Kahl

In real crystals and at finite temperatures point defects are inevitable. Under shear their dynamics severely influence the mechanical properties of these crystals, giving rise to non-linear effects, such as...


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