Fabrication of BaSi2 homojunction diodes on Nb-doped TiO2 coated glass substrates by aluminum-induced crystallization and two-step evaporation method

BaSi2 homojunction diodes on Nb-doped TiO2 (TiO2:Nb) coated glass substrates were fabricated using aluminum-induced crystallization (AIC) and two-step evaporation method. From Raman scattering spectra, the growth of BaSi2 on TiO2:Nb was confirmed when the thickness of poly-Si grown by AIC (AIC-Si) was more than 150 nm. The partial formation of BaSi2 diodes was confirmed from the samples prepared at temperature during AIC TAIC=475-525 oC. The long-wavelength edge of photoresponsivity of the diodes was located around 950 nm, which corresponds to the bandgap of BaSi2 of 1.3 eV, suggesting that this photocurrent is derived from BaSi2 thin films. At TAIC =500 oC, the maximum value of photoresponsivity was obtained. Since the largest grains in AIC-Si were also obtained at TAIC=500 oC, these results suggest that larger grain of AIC-Si leads to the improvement of the quality of BaSi2 thin films themselves and the performance of BaSi2 diodes.

Effect of Ultra-High-Molecular-Weight Molecular Chains on the Morphology, Crystallization, and Mechanical Properties of Polypropylene

The effects of the ultra-high-molecular-weight (UHMW) component of polypropylene (PP) on its rheological properties, crystallization behavior, and solid-state mechanical properties were investigated using various measurement techniques. The terminal relaxation time—determined by measuring the linear viscoelasticity—was increased by adding the UHMW component. The increase in the melt elasticity produced by adding the UHMW component was observed by measuring the steady-state shear flow, although the shear viscosity was not greatly affected. Owing to the long characteristic time of the Rouse relaxation of the UHMW component, PP with the UHMW component formed highly oriented structures through a shear-induced crystallization process. The addition of the UHMW component enhanced the orientation and regularity of crystalline structure for extruded films. Therefore, the Young’s modulus, yield stress, and strength were higher in the PP film containing the UHMW component than in one without the UHMW component, irrespective of the direction of tensile deformation.

Possible shock-induced crystallization of skeletal quartz from supercritical SiO2-H2O fluid: A case study of impact melt from Kamil impact crater, Egypt

Since its discovery, the Kamil crater (Egypt) has been considered a natural laboratory for studying small-scale impact cratering. We report on a previously unknown shock-related phenomenon observed in impact melt masses from Kamil; that is, the shock-triggered formation of skeletal quartz aggregates from silica-rich fluids. These aggregates are unshocked and characterized by crystallographically oriented lamellar voids and rounded vesicles. The distribution of the aggregates can be correlated with former H2O- and impurity-rich heterogeneities in precursor quartz; i.e., fluid inclusions. The heterogeneities acted as hot spots for local melting. Due to the presence of H2O and the high impact pressure and temperature, the formation of a localized supercritical fluid is plausible. Below the upper critical end point of the SiO2–H2O system (temperature <1100 °C and pressure <1 GPa), SiO2 melt and H2O fluid become immiscible, leading to the rapid and complete crystallization of skeletal quartz.

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P$$_{\mathrm{R}}$$ R = 47 $$\upmu$$ μ C/cm$$^{2}$$ 2 is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention.