ABSTRACTWe present experimental and theoretical characterization of InP-based heterostructure integrated thermionic (HIT) coolers. In particular, the effect of doping on overall device performance is characterized. Several thin-film cooler devices have been fabricated and analyzed. The coolers consist of a 1μm thick superlattice structure composed of 25 periods of InGaAs well and InGaAsP (λgap ≈ 1.3μm) barrier layers 10 and 30nm thick, respectively. The superlattice is surrounded by highly-doped InGaAs layers that serve as the cathode and anode. All layers are lattice-matched to the n-type InP substrate. N-type doping of the well layers varies from 1.5×1018cm−3 to 8×1018cm−3 between devices, while the barrier layers are undoped. Device cooling performance was measured at room-temperature. Device current-versus-voltage relationships were measured from 45K to room-temperature. Detailed models of electron transport in superlattice structures were used to simulate device performance. Experimental results indicate that low-temperature electron transport is a strong function of well layer doping and that maximum cooling will decrease as this doping is increased. Theoretical models of both I-V curves and maximum cooling agree well with experimental results. The findings indicate that low-temperature electron transport is useful to characterize potential barriers and energy filtering in HIT coolers.
Low-Temperature Electron Transport Properties of La2/3+xTiO3-δ(x = 0, 0.13)
