Local structure investigations of carbon by surface extended energy loss fine structure

1985 ◽  
Vol 21 (1-4) ◽  
pp. 1-11 ◽  
Author(s):  
C. Natarajan ◽  
P.B. Abel ◽  
R.W. Hoffman
Keyword(s):  
Fine Structure ◽  
Energy Loss ◽  
Local Structure ◽  
Structure Investigations

Surface electron-energy-loss fine-structure investigation on the local structure of copper clusters on graphite

1987 ◽  
Vol 35 (12) ◽  
pp. 5997-6003 ◽  
Author(s):  
M. De Crescenzi ◽  
M. Diociaiuti ◽  
L. Lozzi ◽  
P. Picozzi ◽  
S. Santucci
Keyword(s):  
Fine Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Local Structure ◽  
Structure Investigation ◽  
Surface Electron ◽  
Copper Clusters ◽  
Electron Energy Loss

New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure

2007 ◽  
Vol 131-133 ◽  
pp. 473-478
Author(s):  
Federico Boscherini ◽  
D. De Salvador ◽  
G. Bisognin ◽  
G. Ciatto
Keyword(s):  
Fine Structure ◽  
Local Structure ◽  
Light Elements ◽  
Semiconductor Physics ◽  
X Ray ◽  
Absorption Fine ◽  
Radiation Sources ◽  
Structure Investigations ◽  
X Ray Absorption ◽  
Semiconductor Properties

X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.

High spatial resolution extended energy loss fine structure investigations of silicon dioxide compounds

1995 ◽  
Vol 59 (1-4) ◽  
pp. 149-157 ◽  
Author(s):  
Zou Wei Yuan ◽  
Stefan Csillag ◽  
Mohammad A. Tafreshi ◽  
Christian Colliex
Keyword(s):  
Fine Structure ◽  
Energy Loss ◽  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Structure Investigations

Local structure determination of the CoSi(111) interface by surface electron energy-loss fine-structure technique

1986 ◽  
Vol 168 (1-3) ◽  
pp. 801-809 ◽  
Author(s):  
E. Chaînet ◽  
M. De Crescenzi ◽  
J. Derrien ◽  
T.T.A. Nguyen ◽  
R.C. Cinti
Keyword(s):  
Fine Structure ◽  
Energy Loss ◽  
Electron Energy ◽  
Structure Determination ◽  
Local Structure ◽  
Surface Electron ◽  
Electron Energy Loss

Some Aspects of Exelfs Analysis in the Electron Microscope

1980 ◽  
Vol 38 ◽  
pp. 118-119
Author(s):  
D. E. Johnson ◽  
S. Csillag
Keyword(s):  
Fine Structure ◽  
Electron Microscope ◽  
Energy Loss ◽  
Analytical Electron Microscopy ◽  
Interference Effects ◽  
Interatomic Distances ◽  
X Ray ◽  
Structure Information ◽  
Microanalytical Technique ◽  
Analytical Electron

Recently, the applications area of analytical electron microscopy has been extended to include the study of Extended Energy Loss Fine Structure (EXELFS). Modulations past an ionization edge in the energy loss spectrum (EXELFS), contain atomic fine structure information similar to Extended X-ray Absorbtion Fine Structure (EXAFS). At low momentum transfer the main contribution to these modulations comes from interference effects between the outgoing excited inner shell electron waves and electron waves backscattered from the surrounding atoms. The ability to obtain atomic fine structure information (such as interatomic distances) combined with the spatial resolution of an electron microscope is unique and makes EXELFS an important microanalytical technique.

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