A spectral response measurement system for large-area solar cells

Solar Cells ◽  
1987 ◽  
Vol 22 (4) ◽  
pp. 287-294 ◽  
Author(s):  
B.L. Sopori
2015 ◽  
Author(s):  
Tiecheng Li ◽  
Leibing Shi ◽  
Ming Xia ◽  
Dejin Yin ◽  
Fangsheng Lin ◽  
...  

1986 ◽  
Vol 25 (16) ◽  
pp. 2715 ◽  
Author(s):  
L. Philippe Boivin ◽  
Wolfgang Budde ◽  
C. X. Dodd ◽  
S. R. Das

2010 ◽  
Vol 1245 ◽  
Author(s):  
Mauro Pravettoni ◽  
Georgios Tzamalis ◽  
Komlan Anika ◽  
Davide Polverini ◽  
Harald Müllejans

AbstractMulti-junction thin-film devices have emerged as very promising PV materials due to reduced cost, manufacturing ease, efficiency and long term performance. The consequent growing interest of the PV community has lead to the development of new methods for the correction of indoor measurements to standard test conditions (STC), as presented in this paper. The experimental setup for spectral response measurement of multi-junction large-area thin-film modules is presented. A method for reliable corrections of indoor current-voltage characterization to STC is presented: results are compared with outdoor measurements where irradiance conditions are close to standard ones, highlighting ongoing challenges in standard characterization of such devices.


1999 ◽  
Vol 557 ◽  
Author(s):  
U. Kroll ◽  
D. Fischer ◽  
J. Meier ◽  
L. Sansonnens ◽  
A. Howling ◽  
...  

AbstractLarge-area deposition of hydrogenated amorphous silicon has been investigated in a single-chamber industrial reactor with electrode dimensions of 40×40 cm2 in the plasma excitation frequency range of 60 to 120 MHz. The film thickness uniformity, analyzed by a light interferometry technique and a step profiler, has been compared with 2-dimensional interelectrode voltage measurements and calculations. The frequency of 80 MHz has been found to be a good compromise between the gain in deposition rate and the homogeneity requirements necessary for a-Si:H solar cells. Under these conditions and while using hydrogen dilution high deposition rates of 6-7 Å/s with a film uniformity of ±5% over a usable substrate size of 30×30 cm2 have been obtained.In the same single-chamber deposition system at 80 MHz, 0.4 gtm thick single-junction a-Si:H solar cells with high performance were fabricated in a total process time of 16 minutes applying a continuous deposition process. Spectral response measurements indicate a minor boron contamination of the i-layer. Initial cell efficiencies of 7.1 % could be achieved for such a fast-grown a-Si:H solar cell.


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