Electric field dependent mobility edge and theory of the breakdown of the integer quantum Hall effect

Abstract The integer quantum Hall effect (IQHE) and its breakdown (onset of dissipation) reflect general properties of the solutions of the time-dependent Schrödinger equation, where the macroscopic electric field E is properly included. In particular, the dynamics of an electron in a broadened Landau band not only depends on the disorder potential but also on the value of |E|. This leads to an I n dependence of the conductivities σxx and σxy, which implies that the IQHE breaks down if |E| is sufficiently high. We show that the general form of the | El-dependence of σxx and σxy can lead to jumps in the longitudinal resistance at the breakdown of the IQHE, as observed in recent experiments.

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Integer and half-integer quantum Hall effect in silicene: Influence of an external electric field and impurities

Physical Review B ◽

10.1103/physrevb.90.235423 ◽

2014 ◽

Vol 90 (23) ◽

Cited By ~ 24

Author(s):

Kh. Shakouri ◽

P. Vasilopoulos ◽

V. Vargiamidis ◽

F. M. Peeters

Keyword(s):

Electric Field ◽

Hall Effect ◽

External Electric Field ◽

Quantum Hall Effect ◽

Quantum Hall ◽

Half Integer ◽

Integer Quantum Hall Effect ◽

Integer Quantum

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An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

Science Advances ◽

10.1126/sciadv.abf1388 ◽

2021 ◽

Vol 7 (8) ◽

pp. eabf1388

Author(s):

Phillip Dang ◽

Guru Khalsa ◽

Celesta S. Chang ◽

D. Scott Katzer ◽

Neeraj Nepal ◽

...

Keyword(s):

Hall Effect ◽

Quantum Hall Effect ◽

Electron Gas ◽

Quantum Hall ◽

High Electron Mobility Transistor ◽

High Electron ◽

2D Electron Gas ◽

Integer Quantum Hall Effect ◽

Topological Quantum ◽

Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

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