Quantum Hall Effect across Graphene Grain Boundary

Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.

Theoretical, Unified Derivation of Both the Integer Quantum Hall Effect and Fractional Quantum Hall Effect

In this paper, using the two integers that describe the stationary 2-dimensional wave and the charge quantization along with the balance between the Lorentz force and electrical force, we succeed in deriving the fractional quantum Hall effect and the integer quantum Hall effect; we find that the latter exists as a special case of the former. Moreover, using the derived expression describing the fractional quantum Hall effect, a relationship between the plateau in the resistivity of the sample and the applied magnetic field is obtained. The findings of this model agree well with experimental measurements. Because the two integers that describe the stationary 2-dimensional wave and the charge quantization along with the force balance have concrete physical meanings in this work, we could provide a clear picture of the origin of both the integer quantum Hall effect and the fractional quantum Hall effect.

Unidirectional Kondo scattering in layered NbS2

Crystalline defects can modify quantum interactions in solids, causing unintuitive, even favourable, properties such as quantum Hall effect or superconducting vortex pinning. Here we present another example of this notion—an unexpected unidirectional Kondo scattering in single crystals of 2H-NbS2. This manifests as a pronounced low-temperature enhancement in the out-of-plane resistivity and thermopower below 40 K, hidden for the in-plane charge transport. The anomaly can be suppressed by the c-axis-oriented magnetic field, but is unaffected by field applied along the planes. The magnetic moments originate from layers of 1T-NbS2, which inevitably form during the growth, undergoing a charge-density-wave reconstruction with each superlattice cell (David-star-shaped cluster of Nb atoms) hosting a localised spin. Our results demonstrate the unique and highly anisotropic response of a spontaneously formed Kondo-lattice heterostructure, intercalated in a layered conductor.

Laughlin anyon complexes with Bose properties

Two-dimensional electron systems in a quantizing magnetic field are regarded as of exceptional interest, considering the possible role of anyons—quasiparticles with non-boson and non-fermion statistics—in applied physics. To this day, essentially none but the fractional states of the quantum Hall effect (FQHE) have been experimentally realized as a system with anyonic statistics. In determining the thermodynamic properties of anyon matter, it is crucial to gain insight into the physics of its neutral excitations. We form a macroscopic quasi-equilibrium ensemble of neutral excitations - spin one anyon complexes in the Laughlin state ν = 1/3, experimentally, where ν is the electron filling factor. The ensemble is found to have such a long lifetime that it can be considered the new state of anyon matter. The properties of this state are investigated by optical techniques to reveal its Bose properties.