Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys

2018 ◽  
pp. 197-209
Author(s):  
Masahiro Yoshimoto ◽  
Kunishige Oe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quaternary Alloys

Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys

2018 ◽  
Vol 47 (8) ◽  
pp. 4321-4324
Author(s):  
K. Ichino ◽  
K. Sahashi ◽  
N. Nanba ◽  
T. Nakashima ◽  
Y. Tomita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quaternary Alloys ◽  
P Type

Growth and strain symmetrization of Si/Ge/C/Sn quaternary alloys by molecular beam epitaxy

1996 ◽  
Vol 68 (25) ◽  
pp. 3608-3610 ◽  
Author(s):  
F. J. Guarin ◽  
S. S. Iyer ◽  
A. R. Powell ◽  
B. A. Ek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quaternary Alloys

Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

1996 ◽  
Vol 159 (1-4) ◽  
pp. 16-20 ◽  
Author(s):  
S.V. Ivanov ◽  
S.V. Sorokin ◽  
P.S. Kop'ev ◽  
J.R. Kim ◽  
H.D. Jung ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Rate Control ◽  
Molecular Beam ◽  
Quaternary Alloys ◽  
Growth Rate Control

Characterization of AlxInyGa1−x−yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

2011 ◽  
Vol 14 (2) ◽  
pp. 164-169 ◽  
Author(s):  
M.A. Abid ◽  
H. Abu Hassan ◽  
Z. Hassan ◽  
S.S. Ng ◽  
S.K. Mohd Bakhori ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quaternary Alloys ◽  
Sapphire Substrates

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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