Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

1988 ◽  
Vol 64 (8) ◽  
pp. 3975-3979 ◽  
Author(s):  
Koki Saito ◽  
Eisuke Tokumitsu ◽  
Takeshi Akatsuka ◽  
Motoya Miyauchi ◽  
Takumi Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Heavily Doped

scholarly journals Raman scattering from heavily doped (311) GaAs:Si grown by molecular beam epitaxy

1992 ◽  
Vol 72 (1) ◽  
pp. 285-286 ◽  
Author(s):  
S. H. Kwok ◽  
R. Merlin ◽  
W. Q. Li ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Molecular Beam ◽  
Heavily Doped

Heavily doped Si layers grown by molecular beam epitaxy in vacuum

1991 ◽  
Vol 127 (2) ◽  
pp. 371-376 ◽  
Author(s):  
V. P. Kuznetsov ◽  
A. Yu Andreev ◽  
O. A. Kuznetsov ◽  
L. E. Nikolaeva ◽  
T. M. Zotova ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

scholarly journals Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source

2002 ◽  
Vol 719 ◽  
Author(s):  
Rob Armitage ◽  
Qing Yang ◽  
Henning Feick ◽  
Yeonjoon Park ◽  
Eicke R. Weber
Keyword(s):  
Optical Properties ◽  
Carbon Tetrachloride ◽  
Molecular Beam Epitaxy ◽  
Carbon Content ◽  
Molecular Beam ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Heavily Doped ◽  
P Type ◽  
Dopant Source

AbstractCarbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (<5×1020 cm-3) were actually ntype rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow (∼6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

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