Influence of the O,F distribution on the electrical properties of the Bi1-x Pbx O1.5-x Fx Solid Solution

1992 ◽  
pp. 115-120
Author(s):  
C. Follet-Houttemane ◽  
J.C. Boivin ◽  
J.C. Champarnaud-Mesjard ◽  
D. Mercurio ◽  
B. Frit
2021 ◽  
Vol 32 (5) ◽  
pp. 6607-6622
Author(s):  
Lagen Kumar Pradhan ◽  
Suman Kumari ◽  
Murli Kumar Manglam ◽  
Rabichandra Pandey ◽  
Manoranjan Kar

2017 ◽  
Vol 310 ◽  
pp. 154-165 ◽  
Author(s):  
Fayçal Bourguiba ◽  
Ah. Dhahri ◽  
S.E.L. Kossi ◽  
J. Dhahri ◽  
K. Khirouni ◽  
...  

2013 ◽  
Vol 479-480 ◽  
pp. 3-7
Author(s):  
Chun Huy Wang

In the present study, various quantities of Bi2O3were added into 0.98(Na0.5K0.5)NbO3-0.02Bi(Na0.93K0.07)TiO3(0.98NKN-0.02BNKT) ceramics. It was found that 0.98NKN-0.02BNKTwith the addition of 0~0.5 wt.% Bi2O3exhibit relatively good piezoelectric properties. For 0.98NKN-0.02BNKT ceramics, the electromechanical coupling coefficients of the planar modekpand the thickness modektreach 0.40 and 0.47,respectively. For 0.98NKN-0.02BNKT ceramics with the addition of 0.3 wt.% Bi2O3, the electromechanical coupling coefficients ofthe planar modekpand the thickness modektreach 0.50 and 0.53, respectively. It is obvious that 0.98NKN-0.02BNKT solid solution ceramics by adding low quantities of Bi2O3is one of the promising lead-free ceramics for electromechanical transducer applications.


2021 ◽  
Author(s):  
S Sasikumar ◽  
Huiqing Fan ◽  
Weijia Wang ◽  
T K Thirumalaisamy ◽  
S Saravanakumar ◽  
...  

2019 ◽  
Author(s):  
A. A. Grebennikov ◽  
A. I. Bocharov ◽  
D. V. Serikov ◽  
E. N. Fedorova ◽  
V. A. Dybov ◽  
...  

1989 ◽  
Vol 164 ◽  
Author(s):  
Tan Hui ◽  
Qin Dong ◽  
Tao Mingde ◽  
Lin Chenglu ◽  
Zou Shichang

AbstractAmorphous CoMnNiO film is doposited on oxidized Si substrate by RF sputtering equipment. Structure relaxation occurs in the amorphous CoMnNiO film when it is annealed below 550°C. Annealed in the range from 600°C to 1000°C, the amorphous film is converted into the polycrystal. After annealing in rich oxygen atmosphere, the amorphous film is transformed into spinel solid solution with stable structure and good electrical properties. The electrical conductivity will be reduced due to formation of low valence oxides when annealed without oxygen. As annealing temperature is higher than 1000°C, some spinel solid solutions will be resolved into low valence oxides CoO and NiO, reducing the conductivity of the CoMnNiO film.


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