Effects of CdZnTe buffer layer thickness on properties of HgCdTe thin film grown by pulsed laser deposition

2013 ◽  
Vol 264 ◽  
pp. 522-526 ◽  
Author(s):  
M. Liu ◽  
D. Bi ◽  
B.Y. Man ◽  
D.M. Kong ◽  
X.Y. Xu
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Buffer Layer Thickness

Growth of highly oriented LiTaO3 thin film on Si with amorphous SiO2 buffer layer by pulsed laser deposition

2007 ◽  
Vol 61 (4-5) ◽  
pp. 1052-1055 ◽  
Author(s):  
Xinchang Wang ◽  
Yongtao Tian ◽  
Liangliang Cao ◽  
Zhizhen Ye
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Amorphous Sio2

The role of SiO2 buffer layer in the growth of highly textured LiNbO3 thin film upon SiO2/Si by pulsed laser deposition

2004 ◽  
Vol 58 (27-28) ◽  
pp. 3597-3600 ◽  
Author(s):  
Xinchang Wang ◽  
Zhizhen Ye ◽  
Junhui He ◽  
Liangliang Cao ◽  
Binghui Zhao
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition

Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers

2012 ◽  
Vol 508 ◽  
pp. 189-192
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Si Substrates ◽  
Partial Pressures ◽  
Deposited Films

Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi2O5 Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (PO2). the Effects of PO2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at PO2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing PO2. at PO2 = 10 Pa, the BaTi2O5 Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi2O5 Films on Si Substrates.

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