Epitaxial growth of GaN thin film on sapphire with a thin ZnO buffer layer by liquid target pulsed laser deposition

1998 ◽  
Vol 84 (10) ◽  
pp. 5776-5779 ◽  
Author(s):  
X. W. Sun ◽  
R. F. Xiao ◽  
H. S. Kwok
2012 ◽  
Vol 1454 ◽  
pp. 183-188 ◽  
Author(s):  
Krishnaprasad Sasi ◽  
Sebastian Mailadil ◽  
Fredy Rojas ◽  
Aldrin Antony ◽  
Jayaraj Madambi

ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.


2015 ◽  
Vol 10 (11) ◽  
pp. 649-652 ◽  
Author(s):  
Jin Wang ◽  
Zhengwei Xiong ◽  
Jian Yu ◽  
Hongbu Yin ◽  
Xuemin Wang ◽  
...  

2007 ◽  
Vol 61 (4-5) ◽  
pp. 1052-1055 ◽  
Author(s):  
Xinchang Wang ◽  
Yongtao Tian ◽  
Liangliang Cao ◽  
Zhizhen Ye

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